This chapter provides an introduction to plasma etch technology focusing on various reactor configurations. The basic processes responsible for plasma etching can be described into five basic steps. These steps include generation of reactive neutral and ionic species in plasma, diffusion of the reactive...
This chapter provides an introduction to plasma etch technology focusing on various reactor configurations. The basic processes responsible for plasma etching can be described into five basic steps. These steps include generation of reactive neutral and ionic species in plasma, diffusion of the reactive...
1. Introduction Polymer materials are widely used today with a multitude of applications: prostheses [1,2], medical devices [3,4], food packaging [5,6], textile industry [7,8], 3D printing [9,10], etc. In addition to bulk properties of a material, surface properties such as hydrophobic...
Introduction to Plasma Physics and Controlled Fusion. His current interest is in plasma processing of semiconductor circuits, especially the radiofrequency sources used to make computer chips, and in the physical processes that permit etching millions of transistors on a single chip. To learn more ...
Introduction of a new high-density plasma reactor concept for high-aspect-ratio oxide etching 来自 掌桥科研 喜欢 0 阅读量: 1 作者:J Marks,A Materials,Inc.,S Clara,CA,USA,K Collins,A Materials,Inc.,S Clara 摘要: ide etch requirements present a fundamental challenge which cannot be easily ...
摘要: Integrated circuit fabrication, e.g., silicon LSI is expedited by plasma etching in any of a novel class of etchants. Appropriate plasma environments are produced by introduction of halide-halogen combinations as exemplified by BCl.sub.3 -Cl.sub.2....
A plasma etching method for setting a large etching ratio and forming a properly shaped hole, and a plasma etcher. For etching an etching target film (204) with a patterned organic film (202) as a mask, a treatment gas is introduced into a hermetic treatment container (104). A lower ele...
Inclined or tapered sidewalls in a silicon (eg polysilicon) substrate 3 are produced by halfway plasma etching (eg RIE) using a CF gas (eg CF 4, CHF 3 , CH 2 F 2 , C 4 F 8 ) through a photoresist mask 4 to leave a fluorocarbon deposit 5 on the sidewall. The silicon residue ...
The strong etching character of CO2 plasma was used to tailor the properties of asymmetric cellulose acetate membranes by reconstruction of chemistry and structure on the top layer [14]. When plasma is used to porous membranes, one may achieve an enlargement of the pore diameter. Hence, the ...
used reactive ion etching to generate microroughness on various polymer substrates and found that antibodies attached preferentially on etched PMMA, Zeonex, but as well on non-etched regions on PC surfaces. This suggested that the introduction of certain RIE-induced functional groups may play a criti...