Plasma Etching is a dry etching method which is the best way to clean a surface before modification. It removes any unwanted organic residues.
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I to provide a method for etching a feature in a layer through the [challenge] etching mask. Protective coating is formed by the protective layer forming gas mixture into the vertical sidewalls of the features and surface exposed [MEANS FOR SOLVING PROBLEMS] The etching mask. Through the etch...
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Plasma etching and plasma deposition tools require vacuum to be able to maintain the plasma and control the gas composition in the process. Other non-plasma deposition processes such as physical vapor deposition require a vacuum for the deposition species to reach the substrate without colliding with...
Express in-situ measurement of single crystal diamond growth/etching rate in microwave plasma: how to perform multiparametric kinetics study in one working... Express in-situ measurement of single crystal diamond growth/etching rate in microwave plasma: how to perform multiparametric kinetics study in...
aUsing plasma etching, the Teflon coating was made hydrophilic everywhere inside the channel except for in an active area, which thus acted as a hydrophobic barrier. 使用血浆蚀刻,特弗隆表层使成为亲水到处在渠道里面除了一个活动区域,因而作为一个疏水障碍。[translate] ...
Component of the cell–cell junction in multicellular organisms in which cadherin receptors bridge neighbouring plasma membranes via their homophilic interactions. Adherens junction provides strong mechanical attachment between neighbouring cells through the linkage of their cytoplasmic face to the actin cytoskel...
(thickness of deposited layers, sample uniformity, attainment of desired optical property) for coatings on Si wafers, glass panels, photovoltaics, etc.; in-situ process control for chemical or physical vapor deposition, atomic layer deposition, or plasma etching; and characterization of semiconductor ...
plasma generated by 13.54 Mllz at 100W,Long and straight diamond nanotubes less than 17um in lengthwere fabricated byadjusting ething time. 金刚石管的平均长度在氧气血浆在lengthwere被制造的byadjusting的ething的时间比17um增加线性地wihtetching的时间引起13.54 Mllz在100W,长期和平直的金刚石nanotubes较少...