A process for plasma etching silicon carbide with selectivity to an overlying and/or underlying dielectric layer of material. The dielectric material can comprise silicon dioxide, silicon oxynitride, silicon nitride or various low-k dielectric materials including organic low-k materials. The etching ...
By utilizing a fluorine-containing gaseous compound in a plasma etching process, isotropic etching of monocrystalline silicon (48) and doped or undoped polycrystalline silicon (54) is achieved. The etching processes, which are applicable, for example, to pattern delineation in the processing of ...
ChemInform Abstract: PLASMA ETCHING OF SILICON AND SILICON DIOXIDE WITH HYDROGEN FLUORIDE MIXTURES A neat plasma etches Si and at rates of about 900 and 120 /min, respectively. Neat etches Si and at about 320 and 90 /min, respectively, while et... G Smolinsky - 《Journal of the ...
A plasma etching process for forming a recess or opening on a silicon substrate by generating plasma between a pair of electrodes in an anode- coupled planar-type plasma etching apparatus and etching the silicon substrate located on one of the electrodes with the plasma, an improvement residing ...
The speed of Si etching, up to 6.5 μm/min, experimentally is received. The etching of silicon is limited to a stage of chemical delivery of active particles to a surface Si, where there is a reaction of etching. The process can be used in MEMS-technology....
During oxygen and carbon tetrafluoride plasma etching of silicon nitride, a light blue and water solublefilm is deposited upon the surface of the silicon nitride layer. Depending upon the thickness, this film retards or completely inhibits the desired etching process. This film has been identified ...
Anisotropic plasma etching of structures in silicon comprises a polymer deposition phase and an etching phase using an etching gas containing oxygen. In the anisotropic plasma etching of structures in silicon, involving a polymerization step of coating lateral structure boundaries defined by an etch mask...
The invention relates to methods for the plasma etching, notably the anisotropic plasma etching, of laterally defined structures in a silicon substrate using a process gas. According to the invention before and/or during etching at least one passivating material is deposited at least temporarily on ...
Microwave plasma discharges of CF4, SF6 and CHF3 at high pressures (0.5-1.5 Torr) have been used for rapid etching of silicon, silicon dioxide and silicon nitride suitable for single-wafer etching applications. Etch rates and selectivities have been studied as a function of pressure, gas flow ...
1. A selective etching method for providing substantially uniform etching of silicon nitride material provided across a surface of a supplied workpiece, the workpiece surface having a span of at least 6 inches, said method being such that deviation of etch depth across the span of the workpiece ...