In one implementation, a semiconductor plasma etching process includes first etching material from a substrate and forming an undesired residue at least partially over the substrate during the first etching. After the first etching and before subsequently depositing any material over the substrate, the...
The semiconductor device manufacturing process using the plasma etching method, using a variety of gases is converted into a plasma state, and the mask pattern thereon wafer ion collision and chemical reaction, hydrogen iodide (HI) as the main etching gas, etching of the silicon substrate material...
PURPOSE: A method for determining an end point of a semiconductor etching process using plasma is provided to easily determine an etching end point in a large scale, by establishing a plurality of wavelengths emitted by a material generated in the etching process, and by using an intensity of ...
plasma (CCP) reactors in which ion flux and ion bombardment energy are intimately coupled. The goals of any plasma etching process are high throughput, high uniformity, high selectivity, anisotropy and no damage. Throughput (wafers per unit time) is a measure of productivity. Uniformity across...
A photoelectrochemical etching process is described for n-type and semi-insulating III-V semiconductor compounds that contain aluminum or indium (AlGaAs, InGaAs) in which a non-aqueous electrolyte is used. High etch rates are achieved without harm to exposed metallization or p- layers. An exempla...
The resulting pulsed plasma process output (etching rate, uniformity, damage, etc) is compared, whenever possible, to that of CW plasma, under otherwise the same or similar conditions. (topical review) 展开 关键词: General or Review/ argon chlorine reviews sputter etching/ etching rate pulsed ...
;SOLUTION: A silicon wafer 10 as an etching object is fastened to a sample stage 32 and, then the internal pressure of a plasma generation chamber 12 and a reaction chamber 14 is decompressed to a prescribed pressure level. Then, reaction gas is introduced to the plasma generation chamber ...
Plasma is a state of matter in which energy is higher than gas. In general, there are three states of matter: solid, liquid, and gas. As the temperature rises, the solid becomes liquid and becomes gas.
Recovery from Plasma-Process-Induced Damage in Porous Silica Low-kFilms by Organosiloxane Vapor Annealing It was demonstrated that recovery from dry etching and ashing damage in porous silica low-k films occurred by 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS)... T Ono,K Kinoshita,H Takahashi...
Even though it’s more costly and complicated, dry etching (also called plasma etching) is the more widely used technique as it produces a higher yield. To start, we need a plasma state. A radical atom dissociated from this plasma state becomes volatile and moves away from the wafer ...