Donohoe, K. G., Turner, T. and Jackson, K. A., Etching pro- cesses in semiconductor manufacturing. In Materials Science and Technology, Vol. 16, (Chapter 6), ed. R. W. Cahn, P. Haasen, E. J. Kramer and K. A. Jackson. VCH Publishers Inc, New York, 1996....
关键词: materials science semiconductor devices etching annealing design fabrication inventions ion implantation process control control 被引量: 107 摘要: An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device ...
A process for forming deep trenches on a surface of a semiconductor substrate by forming a mask on the surface of the semiconductor, which prescribes the position of the trenches; and then dry etching the semiconductor surface using a gas mixture comprising (1) an etchant, bromine containing,...
where fifidelity refers to the degree of matching to the intent of design engineers in shape and composition. Fidelity is dependent on the process variability brought about by manufacturing trillions of transistors per day. Although process variability has always been a constraint to semiconductor manuf...
The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation of the side walls by plasma polymerization using a polymer former. Using this procedure small pixels in down-converted light-emitting diode ...
There are two basic silicon wafer etching methods in semiconductor manufacturing: dry etching and wet etching. Dry etching silicon wafer is to expose the surface of the silicon wafer to the plasma generated in the gaseous state. The plasma passes through the window opened in the photoresist, and...
A process and an alkaline solution for etching a silicon wafer has been discovered wherein the wafer is subjected to an aqueous etching solution comprising a base and an oxidizing agent, wherein the base is comprised of a metal hydroxide such as sodium hydroxide or potassium hydroxide and the ...
PURPOSE:To remove resist to omit a residue-removing process by introducing an inert gas into a gas system, where etching is conducted continuously after a silicon oxide film is etched, and by applying a gas plasma to the silicon oxide film. CONSTITUTION:After a silicon oxide film 104 on alum...
A gas injector for use in a semiconductor etching process including a plurality of injecting holes on the central portion thereof, for injecting process gases, a plurality of bolt holes formed on edge
Etching silicon nitride in a process comprising selective oxidation of a trench side wall in a semiconductor waferThe present invention is directed to a technique for selectively oxidizing trench side walls in a silicon substrate. Each of the side walls can be oxidized individually and to different...