Process for etching semiconductors in the fabrication of miniature semiconductor networks comprising a single semiconductor blockSemi-conductor materials are etched selectively by coating with a photo-sensitive masking material which is then exposed to light through a stencil of the desired pattern, which ...
▲ The etching process Similarly, the etching process in semiconductor fabrication uses a liquid or gas etchant to selectively remove unnecessary materials until the desired circuit patterns are left on the wafer surface. Materials in the areas without pho...
关键词: materials science semiconductor devices etching annealing design fabrication inventions ion implantation process control control 被引量: 107 摘要: An electronic-carrier-controlled photochemical etching process for carrying out patterning and selective removing of material in semiconductor device ...
4. Basic Etching Wafer Process Requirements: An ideal etching in wafer fabrication must have the following characteristics: Anisotropic etching: only vertical etching, no lateral undercutting. Only in this way can it be ensured that the exact same geometric pattern as that on the resist is copied...
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FABRICATION PROCESS OF SEMICONDUCTOR DEVICE, WET-E 优质文献 相似文献Method for manufacturing semiconductor device including etching process of silicon nitride film A manufacturing method of a semiconductor device includes the step for forming a silicon nitride film having a first part where arsenic is in...
1. A process for applying a covering layer to a semiconductor substrate, comprising: providing a semiconductor substrate that is formed from a semiconductor material; providing a stress relief layer on a process surface of the semiconductor substrate, wherein the stress relief layer is produced by ...
Plasma treatment after the netching process can reduce the high off-current problem which occurs when the Mo data line is in contact with the na-Si layer.doi:10.1088/0268-1242/19/7/010Choe HKim SGSemiconductor Science & Technology
A photoelectrochemical etching process is described for n-type and semi-insulating III-V semiconductor compounds that contain aluminum or indium (AlGaAs, InGaAs) in which a non-aqueous electrolyte is used. High etch rates are achieved without harm to exposed metallization or p- layers. An exempla...
Conventional methods of plasma etching in semiconductor manufacturing process PROBLEM TO BE SOLVED: To provide an etching method which can obtain good etching performance without variation, though considering a difference in physical properties and the like between semiconductor substrates; and provide a se...