Etching mechanisms of SiC thin films in CF4/CH2F2/N2/Ar inductively coupled plasmas were studied based on the correlations between measured SiC etching rates and model-predicted fluxes of plasma activdoi:10.1007/s11090-016-9781-7Lee, Jongchan...
The experimental results of the investigations of the mechanisms of anisotropy of silicon RIE, using a /plasma, are presented and discussed.doi:10.1016/0167-9317(94)90173-2V.A. YunkinI.W. RangelowJ.A. SchaeferD. FischerE. VogesS. Sloboshanin...
Reactive ion etching (RIE) of silicon and germanium in CF4-O2 radio frequency plasmas has been investigated by means of optical emission spectroscopy, mass... A Campo,C Cardinaud,G Turban - 《Plasma Sources Science & Technology》 被引量: 22发表: 1995年 Effects of Gas and Surface Temperatu...
11,12,13,14,15,16,17]. Firstly, the viscosity of liquid electrolyte experiences a sharp escalation and even solidification, resulting in a decrease in wettability and ionic conductivity. Then, the Li+(de)solvation processes become sluggish, thereby severely impeding the...
An investigation of the SrBi2Ta2O9 (SBT) etching mechanism in a Cl2/Ar plasma was carried out. Experiments showed that an increase of the Ar mixing ratio under constant pressure and input power conditions leads to increasing an etch rate of SBT, which reaches a maximum value when the Ar...
EtchingSilicon carbideCF4Sample heatingAtmospheric pressureThe material removal of the C- and Si-face of 4H-SiC using a 13.56MHz RF excited plasma jet source at atmospheric pressure using helium as feed gas and CF4 as reactive gas has been investigated. Additionally O2 is provided together with ...
Mechanisms of silicon oxide etching in a highly polymerized fluorocarbon plasmaReactive-ion-etching (RIE) induced surface modifications of SiO$- 2$/ and phosphosilicate glass (PSG) were investigated using thermal desorption mass spectroscopy (TDS) and x-ray photoelectron spectroscopy (XPS) in order ...
Joubert and M. Pons, "Plasma etching of silylated photoresist: a study of mechanisms", J. Vac. Sci. Technol. B 1111), Jan/Feb 1993, p.26-31, (1993).
concept is relatively simple, the complexities of the glow discharge itself and of the associated parameter space have impeded the development of a detailed understanding of the chemical reactions involved in the process, which in turn has impeded the implementation of plasma etching in device ...
Etching process mechanismThe comparative study of SiC and SiO 2 etching kinetics as well as the evaluation of SiC etching mechanisms in CF 4 +Ar, Cl 2 +Ar and HBr+Ar gas mixtures in inductively coupled plasma reactor were carried out. For each binary gas system, the experiments (SiC and ...