Generation of fluorinated plasmas in a hollow cathode reactive ion etching reactor.A detailed experimental chemistry analysis of SF6 and CF4 plasmas.The effect of oxygen in SF6 and CF4 HCRIE is more evidenced.It is noteworthy the higher density values of fluorine atom in HCRIE environment.From ...
Results for the reactive ion etching and patterning of benzocyclobutene (BCB) in CF4/O-2 and SF6/O-2 plasmas in a parallel-plate reactor with Langmuir probe and optical emission diagnostics are reported. The behavior of the O atom concentration [O] is similar in both plasmas, showing a stro...
Study ofCF4,C2F6,SF6andNF3Decomposition Characteristics and Etching Performance in Plasma State C2F6, SF6 and NF3 in their plasma state were studied for use as self-cleaning gases in plasma-enhanced chemical vapor deposition (PE-CVD) equipment. ... Kunihiko,Koike,Tatsuo,... - 《Japanese Journa...
it induced a difference in the OH density between the internal and external surface of the nanopore. The oxygen plasma etching on polymeric materials can modify them from cylindrically to conically shape. For instance, the nanopores etched with plasma can either be almost entirely cylindrical and ...
The influence of substrate holder temperature on the etching rate and the surface roughness of plasma-chemical etching of the SiC in SF6/O2gas mixture has been studied. It is demonstrated that as the etching temperature increases, the etching rate increases monotonically up to the moment when othe...
Dynamic analyses in mass spectrometry of SF6 plasma during etching of silicon: Nobuki Mutsukura and Guy Turban. Vacuum 39(6), 579 (1989)doi:10.1016/0026-2714(90)90483-4ELSEVIERMicroelectronics Reliability
Etch Defect Reduction Using SF6/O2Plasma Cleaning and Optimizing Etching Recipe in Photo Resist Masked Gate Poly Silicon Etch Process Etch defect reduction using SF6/O2 plasma cleaning and optimizing etching recipe in photo resist masked gate poly silicon etch process. Jpn. J. Appl. ... Seong,...
SF6 plasma etching of silicon nanocrystals An SF(6)-based plasma has been employed to perform in-flight etching of silicon nanocrystals (Si-NCs) after they were synthesized in an SiH(4)-based plasma... RW Liptak,B Devetter,JH Thomas,... - 《Nanotechnology》 被引量: 49发表: 2009年 SF6...
SF 6 /O 2 plasma discharge has extensive applications in semi-conductor industry for anisotropic etching of silicon. Herein, a self-consistent fluid model has been used to investigate the capacitive coupled SF 6 /O 2 plasma discharge. A complete set of reactions in gas phase which include ...
A new magnetron ion etching (MIE) process has been developed to etch 50 μm deep trenches into single crystalsilicon. The optimized SF6/O2 gas mixture results in a nearly vertical etch profile with a vertical to horizontal etch rate ratio of 9.4. Similar experiments were carried out on a Dr...