PLASMA-ENHANCED ATOMIC LAYER ETCHING METHODPROBLEM TO BE SOLVED: To provide a method of etching a layer on a substrate including at least one etching cycle.FUKAZAWA ATSUTAKE深澤 篤毅
Methods and apparatus for etching substrates using self-limiting reactions based on removal energy thresholds determined by evaluating the material to be etched and the chemistries used to etch the material involve flow of continuous plasma. Process conditions permit controlled, self-limiting anisotropic ...
Etching and deposition of a wide variety of films Low damage and precise depth and thickness control Processes over a wide temperature range Plasma Etching Reactive Ion Etching (RIE) Reactive Ion Etching – Plasma Enhanced (RIE-PE) Inductively Coupled Plasma Etching (ICP) ...
The embodiments herein focus on plasma enhanced atomic layer deposition (PEALD) processes using pulsed plasmas. While conventional PEALD processes use continuous wave plasmas during
In this work, the authors introduce low temperature deposition of SiNx using neopentasilane [NPS, (SiH3)4Si] in a plasma enhanced atomic layer deposition process with a direct N2 plasma. The growth with NPS is compared to a more common precur... 展开 关键词: Plasma etching Thin film ...
Faraz T, Arts K, Karwal S, Knoops HC, Kessels WM (2019) Energetic ions during plasma-enhanced atomic layer deposition and their role in tailoring material properties. Plasma Sources Sci Technol 28(2):024002 CASGoogle Scholar Fattah-Alhosseini A, Molaei M, Babaei K (2020) The effects of na...
Plasma contains ions, and excited atoms and molecular radicals that are chemically more reactive than normal molecular gases; and the reactivity of these reactive precursors with substrate is further enhanced by simultaneous ion bombardment. Therefore, in contrast to metal-assisted chemical etching which...
In this work, focused ion beam (FIB) lithography was developed for plasma enhanced atomic layer deposited (PEALD) silicon dioxide SiOhard mask. The PEALD process greatly decreases the deposition temperature of the SiOhard mask. FIB Gaion implantation on the deposited SiOlayer increases the wet ...
Atomic layer or cyclic plasma etching chemistries and processes to etch films are disclosed. Films include Si, Ti, Ta, W, Al, Pd, Ir, Co, Fe, B, Cu, Ni, Pt, Ru, Mn, Mg, Cr, Au, alloys thereof, oxides thereof, nitrides thereof, and combinations thereof.Rahul Gupta...
Influence of the oxygen plasma parameters on the atomic layer deposition of titanium dioxide on the morphology and optical properties of TiO2 thin films has been extensively analyzed in plasma enhanced atomic layer deposition (PEALD) processes. Cryst... S Ratzsch,EB Kley,A Tünnermann,... - 《...