ITOEtch-A1氧化銦錫蝕刻液 一、物品與廠商資料 物品名稱:ITOEtch-A1氧化銦錫蝕刻劑 物品編號:9683 建議用途及限制使用:酸性剝離劑。半導體製程之金屬蝕刻液。 製造商或供應商地址及電話: 公司名稱:台灣波律股份有限公司 地址:台北市民權東路三段178號14樓 電話:(02)2719-8266;(03)534-5641 傳真...
1. 草酸水溶液 ...r) 铝蚀刻液(Al Etchant) 3.48%草酸水溶液(ITO-Etch) RGB再生剂 (RGB-rework chemical) 彩色滤光片ITO膜再生药剂 (IT… tw.onlinecha.com|基于5个网页 2. 氧化铟锡蚀刻液 氧化铟锡蚀刻液(ITO-etch)Download 环己酮 Download 乙酸正丁酯 Download 二甲基乙醯胺 Download 钼蚀刻液 Down...
in-line wet etch/cleaning systemITOFor the cost reduction in the fabrication of display panels, a reverse moving system was equipped to a new compacted in-line wet etch/cleaning system. For the possibility of the alternating movement of glass substrate during wet etch process, indium tin oxide...
The results showed that the alternating motion of substrate is superior to the normal motion of substrate in etch rate and is almost equivalent to the normal motion in etch uniformity. 展开 关键词: alternating motion etch rate etch uniformity in-line wet etch/cleaning system ITO ...
ITO Etch-MSDSITOEtch物质安全数据表 一、物品与厂商资料 物品名称:ITOEtch 物品编号:— 制造商: 二、成分辨识资料 纯物质: 混合物: 组分 化学文摘社登记号码 (CAS No.) 浓度或浓度范围 (成分百分比) 危害物质分类 化学性质: 三氯化铁(Ferrictrichloride)7705-08-0—8 盐酸(Hydrochloricacid)7647-01-0—8 三...
1. 草酸水溶液 ...r) 铝蚀刻液(Al Etchant) 3.48%草酸水溶液(ITO-Etch) RGB再生剂 (RGB-rework chemical) 彩色滤光片ITO膜再生药剂 (IT… tw.onlinecha.com|基于5个网页 2. 氧化铟锡蚀刻液 氧化铟锡蚀刻液(ITO-etch)Download 环己酮 Download 乙酸正丁酯 Download 二甲基乙醯胺 Download 钼蚀刻液 Down...
The invention relates to a low tension ITO etchant. The etchant is characterized by comprising the following components by weight percent: 3.2-3.6% of oxalic acid, 0.1-0.2% of n-hexanoic acid and 96.2-96.6% of water. The invention has the advantages that the surface tension is less than ...
PURPOSE: A composition of improved ITO or amorphous ITO etch solution is provided to use the etch solution under the low temperature by controlling easily the etch speed. CONSTITUTION: A composition of improved ITO or amorphous ITO etch solution includes an oxalic acid of 0.5 to 8 weight ...
Under certain conditions during ITO etching using CH4/H2/Ar inductively coupled plasmas, the etch rate selectivity of ITO to photoresist (PR) was infinitely high because the ITO films continued to be etched, but a net deposition of the α-C:H layer occurred on the top of the PR. Analyses...
A three-step batch-type indium recovery method was developed to prove feasibility of recovering indium powders from highly acidic dilute indium chloride solution prepared by dissolving indium tin oxide (ITO) electrodes of waste liquid crystal display (LCD) panels in concentra...