In Section 3, metal gate electrodes and the interfacial structures between high-k dielectrics and metal gates are discussed. The electron beam damage effects in high-k gate stacks are also evaluated, and their origins and prevention are described in Section 4. Finally, we end this review with ...
METHOD FOR INTEGRATION OF DUAL METAL GATES AND DUAL HIGH-K DIELECTRICS IN CMOS DEVICES The present invention provides a method for integrating the dual metal gates and the dual gate dielectrics into a CMOS device, comprising: growing an ultra-thin interfacial oxide layer or oxynitride layer by ...
A method for forming a transistor including a self aligned metal gate is provided. According to various method embodiments, a high-k gate dielectric is formed on a substrate and a sacrificial carbon gate is formed on the gate dielectric. Sacrificial carbon sidewall spacers are formed adjacent to...
The present work addresses the investigation of high-? dielectrics and their applicability in CMOS-devices, using metal-gate electrodes. The contents firstly include the deposition of zirconium dioxide and hafnium dioxide from the gas phase, using organometallic precursors, and their physico-chemical cha...
From the simulation results of ION and IOFF, it was proven that HfO2 is the best dielectric material with combination of metal gate, TiSi2. 展开 关键词: Logic gates Hafnium compounds High K dielectric materials Dielectrics Aluminum oxide MOS devices DOI: 10.1109/SMELEC.2014.6920794 被引量: ...
Fabrication and evaluation of devices containing high K gate dielectrics and metal gate electrodes for the 70 and 50nm technology nodes of ITRS. (Under the direction of Dr. Veena Misra.) This dissertation has focused on fabrication and characterization of alternative gate stacks consisting of high-...
Based on C-V and internal photoemission measurements, we show the existence of an interfacial voltage drop (i.e. dipole) at the high-k SiO_2 interface, as well as of variations in metal work function with metal gate process. Finally, we present a complete study of the transport mechanisms...
In order to obtain high performance CMOS devices with scaled dimensions, introduction of new technologies into the front-end fabrication process are required and therefore technologies such as strained channel, metal gate, high-k gate dielectrics, thin body SOI, and multi-gate transistor, are propose...
The present invention relates to power conserving electronic circuits. In particular, it relates to circuit structures having high-k containing gate dielectrics and metal containing gates. The invention also relates to ways of adjusting the threshold voltages for suiting low power operation. ...
BE-SONOS flash memory along with metal gate and high-k dielectrics in tunnel barrier and its impact on charge retention dynamics 来自 国家科技图书文献中心 喜欢 0 阅读量: 64 作者:S Jain,D Gupta,V Neema,S Vishwakarma 摘要: We investigate the effect of a high-kdielectric in the tunnel layer...