PROBLEM TO BE SOLVED: To provide a blocking dielectric engineered charge trapping memory cell.LAI CHENG CHIH▲頼▼昇志LUE HANG-TING呂函庭LIAO CHIEN WEI廖健▲イ▼
Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High- kappa Gate Dielectric Chin, “Low-Voltage Steep Turn-On pMOSFET Using Ferroelectric High-κ Gate Dielectric,” IEEE Electron Device Lett., vol. 35, no. 2, pp. 274-276,... Cheng, C.H.,A Chin - 《IEEE Electron Device Letters...
In this article, high performance p-channel, low temperature polysilicon thin-film transistors (LTPS-TFTs) are fabricated by using HfO(2) gate dielectric and two crystallization methods, solid phase crystallization (SPC) and metal-induced lateral crystallization (MILC) are compared. High field-effec...
High-kappa dielectric oxide as an interfacial layer with enhanced photo-generation for Gr/Si solar cellsPECVDGrapheneHafnium oxideIn recent years, graphene (Gr) based solar cells have attracted extensive interest because of their ability to produce low cost and highly efficient solar cells. ...
The first etch gas chemistry contain no oxygen containing gas in order to break through etching of the high dielectric constant materials, to dean any residues left from previous polysilicon etch process resulting in less high-魏 foot, and also to control silicon recess problem associated with an...
(kappa's) as well as other favorable properties.To find the film composition for obtaining a good dielectric from the given component oxides is a time-consuming and costly process for multi-component systems.Recently,we reported a combinatorial chemical vapor deposition (CVD) technique to deposit ...
kappa-value of the Al2O3 blocking oxide with no sacrifice of the bandgap, as well as a reduced low-field leakage component and improved dielectric ... JK Park,SH Lee,JS Oh,... - 《Applied Physics Express》 被引量: 1发表: 2012年 Performance Improvement in Charge-Trap Flash Memory Using...
MOSFETs and MOSCAPs of a single-layer thin HfO/sub 2/ gate dielectric with dual polysilicon gate were fabricated with self-aligned process and characterized. Polysilicon and dopant activation processes were optimized such that leakage cu... Kang,L.,Onishi,... - International Electron Devices Meeti...
The first etch gas chemistry contain no oxygen containing gas in order to break through etching of the high dielectric constant materials, to dean any residues left from previous polysilicon etch process resulting in less high-魏 foot, and also to control silicon recess problem associated with an...
High-[kappa] gate dielectric by sol--gel method.(Advanced materials)(Brief Article)Kraft, Arno