In this work, the degradation of electrical performances of Double-Gate MOSFET due to the fringing induced barrier lowering (FIBL) effect induced by high- κ gate dielectrics is investigated using a two-dimensional quantum-mechanical simulation code. Our numerical results show that all electrical ...
Novel two-dimensional electromagnetic bandgap structures (2D EBGs) (Fig. 17.13) were fabricated by the moulding/demoulding technology based on the simulations, with high permittivity BZN dielectrics. The impacts of high permittivity on the 2D EBGs’ properties showed very interesting multi-bandgap phen...
Two dimensional displaysHafnium compoundsHfSe2is an attractive 2-D material for electronic devices due to the existence of natively compatible HfO2. Using density functional theory and the non-equilibrium Green's function, we have explored monolayer HfSe2for device applications. Despite different...
Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-tosemiconductor Schottky barrier ...
We present a simulation study of the coherent transport of electrons through high permittivity (high- κ) dielectric barriers using the non-equilibrium Green's function (NEGF) formalism. Calculation and useful formula are established for a one-dimensional grid using a finite-difference scheme and an...