Two-Dimensional Tunneling Effects on the Leakage Current of MOSFETs With Single Dielectric and High- $kappa$ Gate Stacks The gate leakage currents of single-gate silicon-on-insulator (SOI) n-type MOSFETs are investigated, assuming direct tunneling as the leakage mechanism and... M Luisier,A ...
In this work, the degradation of electrical performances of Double-Gate MOSFET due to the fringing induced barrier lowering (FIBL) effect induced by high- κ gate dielectrics is investigated using a two-dimensional quantum-mechanical simulation code. Our numerical results show that all electrical ...
Two dimensional displaysHafnium compoundsHfSe2is an attractive 2-D material for electronic devices due to the existence of natively compatible HfO2. Using density functional theory and the non-equilibrium Green's function, we have explored monolayer HfSe2for device applications. Despite different ...
We present a simulation study of the coherent transport of electrons through high permittivity (high- κ) dielectric barriers using the non-equilibrium Green's function (NEGF) formalism. Calculation and useful formula are established for a one-dimensional grid using a finite-difference scheme and an...
Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-tosemiconductor Schottky barrier ...
, and TiO2/poly(AUP)—15 wt% were 1.66 × 10−6, 4.03 × 10−5, and 1.75 × 10−3at 2 MV·cm−1, respectively. These results were expected due to the differences in structure of the two materials. In nanocomposites such as TiO2/poly(AUP), the dielectric constant is ...