"The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate...
【2013英美经典书籍】《High Permittivity Gate Dielectric Materials》【已搜索,无重复】 出版时间:2013年 页码数量:515 页 文件大小:15.1 MB 书籍简介: "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials...
A field effect semiconductor device comprising a high permittivity silicate gate dielectric and a method of forming the same are disclosed herein. The device comprises a silicon substrate <B>20</B> having a semiconducting channel region <B>24</B> formed therein. A metal silicate gate dielectric...
A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) ...
There are a lot of Hk materials such as SrTiO3, PbTe and PZT, of which the value of k is in the range of 100–500 or even higher [10,19]. Fig. 5 shows the dependence of BV on the relative dielectric permittivity k and the dielectric thickness tHk for the proposed structure. Show...
A new capacitance technique is proposed for the extraction of important parameters of MOS nano-transistors with high permittivity ultrathin (equivalent oxide thickness (EOT)=0.5 to 2.0 nm) gate dielectrics. These parameters include the gate dielectric capacitance, the flat-band voltage, the surface ...
We have discussed two potential approaches for continued metal gate/high-k gate stack scaling in gate-first integration schemes, both based on increasing the permittivity of the dielectric stack: highly nitrided bottom interlayers and Ti-based ‘higher-k’ gate dielectrics. We find that EOT and Ti...
Remote scavenging technology using a Ti/TiN capping layer interposed in a metal/high-k gate stack High permittivity materials have been required to replace traditional SiO_2 as the gate dielectric to extend Moore's law.However,growth of a thin SiO_2-lik... 马雪丽,韩锴,王文武,... - 《Jour...
order to make the gate dielectric electrically thinner, one would (1) physically thin down gate dielectrics, (2) select gate dielectric materials with higher dielectric permittivity (“high k” materials), and (3) choose gate electrodes adjacent to the gate dielectric with a smaller depletion ...
Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically active traps and efficient gate controllability. However, existing two-dimensional insulators do not provide a good trade-off ...