必应词典为您提供high-k-gate-dielectric的释义,网络释义: 高介电闸极氧化层;栅电介质;门电介质;
栅高k高高k介质Highk高k栅介质highgatehighk 系统标签: dielectricgatehigh介质oxidesband METAL OXIDE SEMICONDUCTOR (MOS) DEVICES Term Paper Topic: Hafnium-based High-K Gate Dielectrics AUTHOR KYAWTHETLATT 2 Content 1. High-k Gate Dielectric introduction 3 2. Brief history of high-k dielectric devel...
High-K dielectric thin films have been investigated as alternative gate dielectrics. Our results suggest that single-layer sputtered ZrOor HfOthin films deposited directly on Si substrate, without the use of a barrier layer, exhibit excellent electrical and reliability characteristics. Equivalent oxide ...
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
2007年,Intel公司宣布在 45nm CMOS 工艺节点上成功地使用高k氧化铪基(Hf-oxide Based)介质和金属栅工艺,可以显著减少栅介质泄漏电流和增加栅导电能力。 但高k氧化铪基栅介质较易被源漏退火步骤的热过程引起结晶化,导致较大的泄漏电流,因此高k介质金属栅模块工艺需要在源漏之后再形成,这被称为后栅(Gate Last)工...
1. A semiconductor device, comprising: a first transistor comprising: a first active region, and a first gate dielectric layer over the first active region, the first gate dielectric layer comprising a first concentration of a dipole inducing material; a second transistor comprising: a second activ...
The semiconductor structure comprises: a substrate; a gate dielectric layer formed on the substrate; a metal gate electrode layer formed on the gate dielectric layer; and at least one metal-containing adjusting layer for adjusting a work function of the semiconductor structure, in which an ...
Selective Etching of High-k Gate Dielectric MaterialsHigh-ketchsilicateHfO_2ZrO_2The expected process sequence for high-k gate dielectrics requires etching of the high-k film using the polysilicon gate electrode as a mask. The leading high-k material candidates, the oxides and silicates of ...
An ultrathin gate dielectric having a graded dielectric constant and a method for forming the same are provided. The gate dielectric is believed to allow enhanced performance of semiconductor devices including transistors and dual-gate memory cells. A thin nitrogen-containing oxide, preferably having ...
HighkGateDielectricsforCMOSTechnology 系统标签: dielectricscmosgatehightechnologykyeongjae BrochureMoreinformationfromhttp://.researchandmarkets/reports/2253866/High–kGateDielectricsforCMOSTechnologyDescription:Astate–of–the–artoverviewofhigh–kdielectricmaterialsforadvancedfield–effecttransistors,frombothafundamental...