1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
A new relatively high-k gate dielectric gate material comprising calcium oxide will reduce leakage from the silicon substrate to the polysilicon gate, prevent boron penetration in p-channel devices, and reduce electron trapping in the dielectric. The surface of a silicon wafer is saturated with ...
High-k Gate Dielectric 1. Introduction Among the three main components of the transistor – gate stack, source/drain, and channel length; gate stack has been the most sophisticated and sensitive part for it performance, yield and reliability. From the performance perspective, scaling of silicon ...
US6544906 * 2001年10月25日 2003年4月8日 Texas Instruments Incorporated Annealing of high-k dielectric materialsUS6544906 * Oct 25, 2001 Apr 8, 2003 Texas Instruments Incorporated High dielectric constant (high-k) gate dielectric layer; ambient of hydrogen and an oxidizing gas prevents or reduces...
High-K gate dielectricsRecrystallization temperatureLow-K interface layerMetal gate electrodeThe traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and ...
High-K materials and metal gates for CMOS applications The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin t... John,Robertson,Robert,... - 《Materials Science & Engineering R Reports》 被引量...
作者: K Cho 摘要: Materials problems of alternative high-k dielectric oxides for future metal-oxide-semiconductor field effect transistor (MOSFET) gate oxide application are examined from first-principles modeling perspective. We have analyzed the relationship between local atomic structures and the ...
网络高介电闸极氧化层;栅电介质;门电介质 网络释义
(EMAILWIRE.COM, April 27, 2019 ) High-k dielectric material is defined as the material which has high dielectric constant k. These materials are principal insulators where negligible current flows from the material during the application of voltage through it. The growi...
Interfacial barrier layer in semiconductor devices with high-K gate dielectric materialUS6693004 * 2002年2月27日 2004年2月17日 Advanced Micro Devices, Inc. Interfacial barrier layer in semiconductor devices with high-K gate dielectric material