to produce a highly dense, uniform, and substantially crack-free dielectric material.doi:US3679440 ADANIEL W. MASONUSUS3679440 * Jan 18, 1971 Jul 25, 1972 Owens Illinois Inc High k dielectric materials
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
(EMAILWIRE.COM, April 27, 2019 ) High-k dielectric material is defined as the material which has high dielectric constant k. These materials are principal insulators where negligible current flows from the material during the application of voltage thro
HighKmaterials 课程:课程:《《微电子材料与工艺微电子材料与工艺》》授课教师:**进授课教师:**进Chapter2High-KDielectrics(part1)Dielectricconstant;Permittivity;Staticdielectricconstant;Dynamicdielectricconstant;Opticalfrequencydielectricconstant;Relativedielectricconstant;Absolutedielectricconstant;课程:课程:《《微电子材...
A method of forming a gate dielectric material includes forming a high-K dielectric material in a first region over a substrate, where forming the high-K d... SK Siddhamalli,MW Simon,ME Cahill 被引量: 0发表: 2014年 Preparation and Property of High-k HfO_2 Gate Dielectric Materials HfO2...
US6544906 * 2001年10月25日 2003年4月8日 Texas Instruments Incorporated Annealing of high-k dielectric materialsUS6544906 * Oct 25, 2001 Apr 8, 2003 Texas Instruments Incorporated High dielectric constant (high-k) gate dielectric layer; ambient of hydrogen and an oxidizing gas prevents or reduces...
Xu, Y., Liu, T., Liu, K.et al.Scalable integration of hybrid high-κdielectric materials on two-dimensional semiconductors.Nat. Mater.22, 1078–1084 (2023). https://doi.org/10.1038/s41563-023-01626-w Download citation Received16 August 2022 ...
elsevier 2009of high-k dielectric ecr ald lanthanum高电介质镧铪氧化物薄膜.pdf,Thin Solid Films 517 (2009) 3900–3903 Contents lists available at ScienceDirect Thin Solid Films journal homepage: Characteristics of high-k dielectric ECR-ALD lanthanum hafni
In this paper, the developments of high gate materials were reviewed. Based on the authors background and research work in the area, the latest achievements of high-K gate dielectric materials on the recrystalization temperature, the low-K interface layer, and the dielectric breakdown and metal ...
To reduce leakage current, SiO2has been substituted with a high K dielectric material, i.e., a material with a K value of greater than 4. Most of these high K gate dielectrics are metal oxides. For example, U.S. Pat. No. 6,184,072 describes using metals like zirconium and hafnium ...