高k介质材料(High-k dielectric materials)指的是介电常数(或称相对介电常数)较高的材料。介电常数是衡量材料对电场响应的能力的一个重要物理量,简而言之,它表示材料在电场作用下的电容储存能力。 1. 什么是介电常数(k值)? 介电常数(k值)是一个无量纲的数值,用来描述某种材料相对于真空在电场中存储电能的能力...
Unique dielectric compositions may be used to formulate thick film pastes for printing microelectronic capacitors. The resulting dielectrics exhibit dielectric constants greater than about 500 and capacitances greater than about 80,000 picofarads per square inch at a thickness of at least about 1.0 ...
1. Introduction The search for high dielectric constant (high-k) gate dielectric materials for ?eld-effect transistor-enabled (FET) applications has stimulated important research activities in both conventional and unconventional electronics. Although it is not the focus of this Review Article, high-k...
US6544906 * 2001年10月25日 2003年4月8日 Texas Instruments Incorporated Annealing of high-k dielectric materialsUS6544906 * Oct 25, 2001 Apr 8, 2003 Texas Instruments Incorporated High dielectric constant (high-k) gate dielectric layer; ambient of hydrogen and an oxidizing gas prevents or reduces...
Xu, Y., Liu, T., Liu, K.et al.Scalable integration of hybrid high-κdielectric materials on two-dimensional semiconductors.Nat. Mater.22, 1078–1084 (2023). https://doi.org/10.1038/s41563-023-01626-w Download citation Received16 August 2022 ...
1、High-k与Low-k的分析 近十年来CPU业者每发表1款新主打CPU,就会顺带标榜该芯片所用的制程技术,最初只标榜尺寸缩密性制程,而近五年来更是强调各种新材质性制程,倘若不去了解新材质制程的意义,那么也将愈来愈不了解新CPU的价值意义过去IBM微电子发表Low k Dielectric(低介电质绝缘,或称:低介电常数绝缘)...
Effects of High-k Dielectric Materials on Electrical Performance of Double Gate and Gate-All-Around MOSFET This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) MOSFET using different high permittivity (high-k) gate ... NF Kosmani,FA Hamid,MA Raz...
1) high k dielectric 高-k材料 2) high k materials 高k材料 3) High 高 1. Chinese character "high" is a word of high frequency which appears in poems of the Tang Dynasty. 唐诗中,"高"是一个出现频率很高的词语,由于其是常见词,对于"高"义在唐诗中的正确理解,注释和辞书很少作较为全面系统的...
Two-dimensional (2D) layered semiconductors, with an atomic thickness that allows superior gate-field penetration, are of interest as channel materials for future transistors2,3. However, the integration of high-dielectric-constant (κ) materials with 2D materials, while scaling their capacitance ...
Ultrathin SiO2 and High-K Materials for ULSI Gate Dielectrics A new high-k dielectric material, i.e., zirconium-doped tantalum oxide (Zr-doped TaOx), in the form of a sputter-deposited thin film with a thickness range of 5-100 nm, has been studied. Important applications of this new ...