to produce a highly dense, uniform, and substantially crack-free dielectric material.doi:US3679440 ADANIEL W. MASONUSUS3679440 * Jan 18, 1971 Jul 25, 1972 Owens Illinois Inc High k dielectric materials
(EMAILWIRE.COM, April 27, 2019 ) High-k dielectric material is defined as the material which has high dielectric constant k. These materials are principal insulators where negligible current flows from the material during the application of voltage thro
A solution to reduce the operating voltages is to enhance gate dielectric capacitance (the drain current scales with the gate capacitance) and, therefore, to employ high-k materials. Finally, note that the dielectric material also indirectly affects FET charge transport characteristics in the ...
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A dielectric material having a high dielectric constant includes a Group III metal oxide and a Group V element. The incorporation of the Group V element in the Group III metal oxide material reduces the number of structural defects in the dielectric material, and reduces both the fixed charge ...
US6544906 * 2001年10月25日 2003年4月8日 Texas Instruments Incorporated High dielectric constant (high-k) gate dielectric layer; ambient of hydrogen and an oxidizing gas prevents or reduces formation of lower dielectric constant (lower-k) material between the high-k gate dielectric and substrate...
High-kdielectricsaredefinedasthosewithadielectricconstantgreaterthanthatofsiliconnitride(k=7).高K介质在IC中的主要应用:1)AsagatedielectricmaterialtoreplaceSiO2inadvancedMOSFETstructures:2)AsadielectricmaterialinthecapacitorstructuresofdynamicRAMS(DRAMS);3)AsadielectricmaterialinthecapacitorstructuresofRFandAnalog/...
Xu, Y., Liu, T., Liu, K.et al.Scalable integration of hybrid high-κdielectric materials on two-dimensional semiconductors.Nat. Mater.22, 1078–1084 (2023). https://doi.org/10.1038/s41563-023-01626-w Download citation Received16 August 2022 ...
importantly, the carrier mobility at the dielectric/Si interface. BRIEF SUMMARY OF THE INVENTION The present invention is directed to solving the above-described problems associated with using a metal oxide to provide a high K dielectric material. More specifically, the invention addresses problems ...
High-K gate dielectricsRecrystallization temperatureLow-K interface layerMetal gate electrodeThe traditional gate dielectric material of SiO2 can not satisfy the need of the continuous downscaling of CMOS dimensions. High-K gate dielectric materials have attracted extensive research efforts recently and ...