L. Kwong, “Integration of high-κ dielectrics and metal gate on gate-all-around Si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 662-664, Jun. 2009. :...
high-kappa dielectrics size effect 摘要 Size-induced suppression of permittivity in perovskite thin films is a fundamental problem that has remained unresolved for decades. This size-effect issue becomes increasingly important due to the integration of perovskite nanofilms into high-kappa capacitors, as ...
In this paper, we compared the structural and electrical properties of high-$kappa~{rm Gd}_{2}{rm O}_{3}$ and ${rm GdTiO}_{3}$ gate dielectrics for an amorphous indium–gallium-zinc oxide ($alpha$-IGZO) thin-film transistor (TFT) application. In comparison with the ${rm Gd}...
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage The key result in this work is that FUSI/HfSi/sub x/O/sub y/ gate stacks offer both significant gate leakage reduction (due to high-/spl kappa/) and ...
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage The key result in this work is that FUSI/HfSi/sub x/O/sub y/ gate stacks offer both significant gate leakage reduction (due to high-/spl kappa/) and dri...
High-k gate dielectrics with ultra-low leakage current for sub-45nm CMOS. Venkateshan, A.,Singh, R.,Poole, K.F.,Harriss, J.,Senter, H.,Teague, R.,Narayan, J. Electronics Letters . 2007A. Venkateshan, et al., "High-k Gate Dielectrics with Ultra-Low Leakage Current for Sub-45nm ...
(CVD) technique to deposit compositional spreads of ternary metal-oxides for high-1C dielectrics.In this work,compositional spreads of ZrO_2,TiO_2,SnO_2 and HfO_2 were deposited using anhydrous metal nitrates.By measuring chemical composition,film thickness,and electrical properties,we are able ...
L. Huang, "InGaAs metal-oxide- semiconductor devices with Ga2O3(Gd2O3) high κ dielectrics for science and technology beyond Si CMOS," MRS Bull., vol. 34, pp. 514-521, 2009. :InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High dielectrics for Science and Technology beyond...
TEM investigations of epitaxial high-kappa dielectrics on siliconBugiel, E.Osten, H. J.Fissel, A.Kirfel, O.Czernohorsky, M.SPRINGER PROCEEDINGS IN PHYSICS
The interface dipole theory is employed to explain our experimental observation that metal work functions on high-/spl kappa/ dielectrics differ appreciably from their values on SiO/sub 2/ or in vacuum. This model shows excellent agreement with original data and reported results in the literature....