L. Huang, "InGaAs metal-oxide- semiconductor devices with Ga2O3(Gd2O3) high κ dielectrics for science and technology beyond Si CMOS," MRS Bull., vol. 34, pp. 514-521, 2009. :InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High dielectrics for Science and Technology beyond...
ChemInform Abstract: High Quality Ultrathin CoTiO3 High‐k Gate Dielectrics. A novel high-κ cobalt-titanium oxide (CoTiO_3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO_3/Si_3N_4/Ni capacitor structure was fabric... TM Pan,TF Lei,TS Chao,... - 《Cheminform》 被...
Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-kappa gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility mu(FE) improvements of simila... MW Ma,TS Chao,TY Chiang,... - 《IEEE Electron Device Le...
Carbon nanotube circuits are implemented with high-&kgr; dielectrics. According to one example embodiment of the present invention, a carbon nanotube circuit includes at least one carbon nanotube with a high-&kgr; dielectric material. In one implementation, a gate electrode is capacitively coupled ...
L. Kwong, “Integration of high-κ dielectrics and metal gate on gate-all-around Si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 662-664, Jun. 2009. :...
Beyond SiO2 Technology: Simulation of the Impact of High-k Dielectrics on Mobility. Journal of Non-Crystalline Solids. 2007; 353(5-7): 630-634Ferrari, G., Watling, J.R., Roy, S., Barker, J.R., and Asenov, A. (2007) Beyond SiO2 technology: simulation of the impact of high-k ...
A. Venkateshan, et al., "High-k Gate Dielectrics with Ultra-Low Leakage Current for Sub-45nm CMOS," Electronics Letters, vol. 43, no. 21, pp. 1130-1131, 2007.High-k gate dielectrics with ultra-low leakage current for sub-45nm CMOS. Venkateshan, A.,Singh, R.,Poole, K.F.,Harriss...
The interface dipole theory is employed to explain our experimental observation that metal work functions on high-/spl kappa/ dielectrics differ appreciably from their values on SiO/sub 2/ or in vacuum. This model shows excellent agreement with original data and reported results in the literature....
High-$$\\kappa $$ź dielectricsTransconductanceThe scaling of MOSFETs is an important and effectidoi:10.1007/s10825-017-0964-0ShafizadehACECRMortazaACECRRezaiACECRAbdalhosseinACECRSpringer-VerlagPUB3755Berlin, HeidelbergJournal of computational electronics...
Surface reactions during the atomic layer deposition of high-kappa dielectrics on III-V semiconductor surfaces.The quality of the dielectric/semiconductor interface is one of the most critical parameters for the fabrication of high-speed and low-power-consumption III-V semiconductor based metal-oxide-...