L. Kwong, “Integration of high-κ dielectrics and metal gate on gate-all-around Si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 662-664, Jun. 2009. :...
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage The key result in this work is that FUSI/HfSi/sub x/O/sub y/ gate stacks offer both significant gate leakage reduction (due to high-/spl kappa/) and ...
L. Huang, "InGaAs metal-oxide- semiconductor devices with Ga2O3(Gd2O3) high κ dielectrics for science and technology beyond Si CMOS," MRS Bull., vol. 34, pp. 514-521, 2009. :InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High dielectrics for Science and Technology beyond...
High-kappa gate dielectrics with ultra-low leakage current for sub-45 nm CMOSVenkateshan, A.Singh, R.Poole, K. F.Harriss, J.Senter, H.Teague, R.Narayan, J.ELECTRONICS LETTERS- IEEHigh-k gate dielectrics with ultra-low leakage current for sub-45nm CMOS. Venkateshan, A.,Singh, R.,...
high-1C dielectrics.In this work,compositional spreads of ZrO_2,TiO_2,SnO_2 and HfO_2 were deposited using anhydrous metal nitrates.By measuring chemical composition,film thickness,and electrical properties,we are able to map kappa and establish its dependence on film composition.This high-...
TEM investigations of epitaxial high-kappa dielectrics on siliconBugiel, E.Osten, H. J.Fissel, A.Kirfel, O.Czernohorsky, M.SPRINGER PROCEEDINGS IN PHYSICS
Pirkle, aChabal, Y JColombo, LWallace, R MGraphene / High-k StacksPirkle, A.; Chabal, Y. J.; Colombo, L.; Wallace, R. M. In-situ Studies of High-κ Dielectrics for Graphene-Based Device. ECS Trans. 2009, 19, 215-224.
The replacement of SiO2 with a high-kappa material allows for an increase in the physical thickness of the gate insulator, while maintaining a low equivalent oxide thickness and low direct tunneling current. Hf-based dielectric stands out in comparison to the other high-kappa dielectrics and ...
We compare metal oxide semiconductor capacitors, investigating Titanium-Nitride and Molybdenum as gate materials, as well as metal organic chemical vapor deposited ZrO2 and HfO2 as high-kappa dielectrics, respectively. The impact of different annealing steps on the electrical characteristics of the ...
The interface dipole theory is employed to explain our experimental observation that metal work functions on high-/spl kappa/ dielectrics differ appreciably from their values on SiO/sub 2/ or in vacuum. This model shows excellent agreement with original data and reported results in the literature....