L. Huang, "InGaAs metal-oxide- semiconductor devices with Ga2O3(Gd2O3) high κ dielectrics for science and technology beyond Si CMOS," MRS Bull., vol. 34, pp. 514-521, 2009. :InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High dielectrics for Science and Technology beyond...
ChemInform Abstract: High Quality Ultrathin CoTiO3 High‐k Gate Dielectrics. A novel high-κ cobalt-titanium oxide (CoTiO_3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO_3/Si_3N_4/Ni capacitor structure was fabric... TM Pan,TF Lei,TS Chao,... - 《Cheminform》 被...
Carbon nanotube circuits are implemented with high-&kgr; dielectrics. According to one example embodiment of the present invention, a carbon nanotube circuit includes at least one carbon nanotube with a high-&kgr; dielectric material. In one implementation, a gate electrode is capacitively coupled ...
L. Kwong, “Integration of high-κ dielectrics and metal gate on gate-all-around Si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 662-664, Jun. 2009. :...
A. Venkateshan, et al., "High-k Gate Dielectrics with Ultra-Low Leakage Current for Sub-45nm CMOS," Electronics Letters, vol. 43, no. 21, pp. 1130-1131, 2007.High-k gate dielectrics with ultra-low leakage current for sub-45nm CMOS. Venkateshan, A.,Singh, R.,Poole, K.F.,Harriss...
Surface reactions during the atomic layer deposition of high-kappa dielectrics on III-V semiconductor surfaces.The quality of the dielectric/semiconductor interface is one of the most critical parameters for the fabrication of high-speed and low-power-consumption III-V semiconductor based metal-oxide-...
high-1C dielectrics.In this work,compositional spreads of ZrO_2,TiO_2,SnO_2 and HfO_2 were deposited using anhydrous metal nitrates.By measuring chemical composition,film thickness,and electrical properties,we are able to map kappa and establish its dependence on film composition.This high-...
L. Gladfelter.Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics. Journal of Materials Chemistry . 2004Combinatorial CVD of ZrO2 or HfO2 compositional spreads with SiO2 for high κ dielectrics. L. Zhong,Z. Zhang,S. A. Campbell,W. L. Gladfelter. Journal...
A critical challenge for the microelectronics industry is the need for higher permittivity dielectrics to replace silicon dioxide. A number of different high- κ materials have been proposed and analyzed as SiO 2 replacements in the next generation of MOSFETs. High- κ materials allow the use of ...
High kappa gate dielectrics for si and compound semiconductors by molecular beam epitaxyKwo, J RHong, M WJ.R. Kwo and M. Hong. High-κ gate dielectrics for Si and compound semicon-ductors by molecular beam epitaxy. Mater. Res. Soc. Symp. Proc. Vol. 745, N8.1.1/T6.1.1 (2003)....