L. Huang, "InGaAs metal-oxide- semiconductor devices with Ga2O3(Gd2O3) high κ dielectrics for science and technology beyond Si CMOS," MRS Bull., vol. 34, pp. 514-521, 2009. :InGaAs Metal Oxide Semiconductor Devices with Ga2O3 (Gd2O3) High dielectrics for Science and Technology beyond...
These results indicate that the high-performance In0.7Ga0.3 As-channel MOSFETs passivated by an alpha -Si layer are promising candidates for advanced post-Si CMOS applications. 展开 关键词: Buried channel InGaAs MOSFET III–V $\alpha$-Si ...
Advanced gate stacks with fully silicided (FUSI) gates and high-/spl kappa/ dielectrics: enhanced performance at reduced gate leakage The key result in this work is that FUSI/HfSi/sub x/O/sub y/ gate stacks offer both significant gate leakage reduction (due to high-/spl kappa/) and d...
high-1C dielectrics.In this work,compositional spreads of ZrO_2,TiO_2,SnO_2 and HfO_2 were deposited using anhydrous metal nitrates.By measuring chemical composition,film thickness,and electrical properties,we are able to map kappa and establish its dependence on film composition.This high-...
L. Kwong, “Integration of high-κ dielectrics and metal gate on gate-all-around Si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory,” IEEE Electron Device Lett., vol. 30, no. 6, pp. 662-664, Jun. 2009. :...
A. Venkateshan, et al., "High-k Gate Dielectrics with Ultra-Low Leakage Current for Sub-45nm CMOS," Electronics Letters, vol. 43, no. 21, pp. 1130-1131, 2007.High-k gate dielectrics with ultra-low leakage current for sub-45nm CMOS. Venkateshan, A.,Singh, R.,Poole, K.F.,Harriss...
In this work we investigate the performance of double-gate and cylindrical nanowire FETs with high-kappa gate dielectrics at their extreme miniaturization limits. The model fully accounts for quantum electrostatics; current transport is simulated by an improved quantum drift-diffusion approach supported by...
Pirkle, aChabal, Y JColombo, LWallace, R MGraphene / High-k StacksPirkle, A.; Chabal, Y. J.; Colombo, L.; Wallace, R. M. In-situ Studies of High-κ Dielectrics for Graphene-Based Device. ECS Trans. 2009, 19, 215-224.
The replacement of SiO2 with a high-kappa material allows for an increase in the physical thickness of the gate insulator, while maintaining a low equivalent oxide thickness and low direct tunneling current. Hf-based dielectric stands out in comparison to the other high-kappa dielectrics and ...
First, an all-inorganic aqueous route to high-kappa metal oxide dielectrics is developed for two ternary systems. Chapters III and IV detail the film formation chemistry and film properties of lanthanum zirconium oxide (LZO) and zirconium aluminum oxide (ZAO), respectively. The functionality of ...