High-κ monocrystalline dielectrics for low-power two-dimensional electronics Lei Yin Ruiqing Cheng Jun He Nature Materials(2024) Ultraflat single-crystal hexagonal boron nitride for wafer-scale integration of a 2D-compatible high-κ metal gate ...
High-κ monocrystalline dielectrics for low-power two-dimensional electronics Lei Yin Ruiqing Cheng Jun He Nature Materials (2024) Integrated 2D multi-fin field-effect transistors Mengshi Yu Congwei Tan Hailin Peng Nature Communications (2024) High-throughput screening and machine learning classific...
These particles essentially possessed monocrystalline graphite structure. The particles were covered by hafnium oxide thin films in metal chloride based atomic layer deposition process carried out at 300聽掳C. Upon deposition of HfO2, thin crystalline metal oxide layer containing mostly cubic phase was ...
The energy band adjustment and control method of the hafnium-based oxide high k gate dielectric layer comprises the following steps of: respectively placing a cleaned quartz plate substrate and a cleaned monocrystalline Si chip substrate into a radio-frequency magnetic control co-sputtering plating ...
1. There depicted is a semiconductor wafer fragment 10 comprising a bulk monocrystalline silicon semiconductor substrate 12. In the context of this document, the term “semiconductor substrate” or “semiconductive substrate” is defined to mean any construction comprising semiconductive material, including...
FIG. 1 schematically illustrates a partially fabricated memory cell100formed over and within a semiconductor substrate110. While the illustrated silicon substrate110comprises an intrinsically doped monocrystalline silicon wafer, it will be understood by one of skill in the art of semiconductor fabrication ...
“Ultra-thin chip properties”. The energy harvesting component in Fig.1shows array of micro photovoltaic cells made of monocrystalline Si.157Further, a graphene based transparent coplanar capacitive touch sensor combined with solar cells forming a smart energy autonomous electronic skin system is also...
‘ST’. To confirm the NIR imaging results, the visible-NIR light below 1200 nm wavelength was filtered out by placing the Si wafer between the metallic shadow mask and the NIR imager. Even though the image was duplicated due to multiple reflections within the Si wafer, the ‘K’ was ...
The approach relies on an unusual type of silicon on insulator wafer to yield devices that exploit ultrathin sheets of monocrystalline silicon for the semiconductor, thin films of magnesium for the electrodes and interconnects, silicon dioxide and magnesium oxide for the dielectrics, and silk for ...
The core pattern357may include silicon oxide, silicon nitride, silicon oxynitride, low-K dielectrics, high-K dielectrics, polysilicon, or a combination thereof. The channel layer356may include a semiconductor layer such as polysilicon, amorphous silicon, monocrystalline silicon, or a combination thereof...