FinFETSi-bulkLocal SOIFinite element analysisHigh-k dielectricMicrofluidic platformThis work presents the technological development and characterization of n-channel fully depleted high-k dielectric FinFETs (Fin Field Effect Transistor) for applications in a liquid environment. Herein, we provide a ...
In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic ...
Xu, Y., Liu, T., Liu, K.et al.Scalable integration of hybrid high-κdielectric materials on two-dimensional semiconductors.Nat. Mater.22, 1078–1084 (2023). https://doi.org/10.1038/s41563-023-01626-w Download citation Received16 August 2022 ...
Design and Comparative Analysis of FD-SOI FinFET with Dual-dielectric Spacers for High Speed Switching Applications The performance of the designed FinFET with single-k and dual-k spacers is analyzed using the Visual-TCAD 3D Cogenda tool and circuit aspects are ... M Amani,A Choubey - 《...
A field effect transistor (FET) including a high dielectric constant (high-k), threshold voltage (Vt) modifying channel and a gate extension devoid of the high-k and/or Vt modifying material, and a related design structure, are disclosed. In one embodiment, a FET may include a gate having...
摘要: is shown for simulated devices with a gate length (over the intrinsic region) of 50 nm, which indicates that the tunnel FET is a promising candidate to achieve better-than-ITRS low-standby-power switch performance.关键词: dielectric materials field effect transistors tunnelling band-to-...
NF Kosmani,FA Hamid,MA Razali 摘要: This paper presents the electrical behaviour of Double Gate (DG) and Gate-All-Around nanowire (GAA) MOSFET using different high permittivity (high-k) gate dielectric materials. In order to study the influence of high-k dielectric material towards DG and ...
Effect of Diameter and High-K Dielectric on Carbon Nanotube versus Nanowire Field Effect Transistor in recent years, like Single-Electron tunneling(SET), Dual Gate MOSFET, Fin FET, Carbon Nanotube FET (CNTFET) and Nanowire Field effect transistors. The... ASB Rani - 《Advanced Science Engineering...
The impact of a high-k dielectrics and the effect of downscaling on the device performance of nanoscale DG-FinFET is studied using the device simulation tool PADRE. Simulations were performed for a wide range of dielectric permittivity k and scaling limits of DG-FinFET structure is studied for...
Apart from the CMOS compatibility, the lower value of the dielectric constant, compared to PZT and BaTiO3 alleviated the critical thickness issue in HfO2. The discovery of ferroelectricity in fluorite structure-based materials like hafnium oxide and zirconium oxide (ZrO2) paved the way for advanced...