Gate-Source Leakage Current 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 栅源漏电流 翻译结果2复制译文编辑译文朗读译文返回顶部...
EVALUATING A GATE-SOURCE LEAKAGE CURRENT IN A TRANSISTOR DEVICEDisclosed is a method, a circuit arrangement, and an electronic circuit. The method includes discharging a gate-source capacitance of a transistor device from a first voltage level to a second voltage level with a first resistor ...
'Source Leakage Current Suppression By Source Surrounding Gate Structure' in Patent Application Approval Process (USPTO 20220359681) 来自 国家科技图书文献中心 喜欢 0 阅读量: 6 摘要: The following quote was obtained by the news editors from the background information supplied by the inventors: "...
In this paper, a novel, nanoscale, metal–oxide–semiconductor field-effect transistor (MOSFET) with gate-to-source/drain non-overlapped and high-k spacer structure has been demonstrated to reduce gate leakage current for the first time. The gate leakage behaviour of the novel MOSFET structure ha...
(TA=25℃unless otherwise noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown VDoraltiang-Seource On-State RDerasiins-tSanocuerce On-State Resistance Gate Threshold Voltage Zero Gate Voltage drain Current Gate Body Leakage Forward Transconductance Dynamic3 BVDSS RDS(ON) RDS(ON)...
(IS=-1A, VGS=0V) Zero Gate Voltage Drain Current 零栅压漏极电流 (VGS=0V, VDS=-20V) Gate Body Leakage 栅极漏电流 (VGS=±10V, VDS=0V) BVDSS -20 -- -- VGS(th) -0.6 -- -1.4 V VSD -- -- -1.5 IDSS -- -- -1 μA IGSS -- -- ±100 nA Static Drain-Source On-State ...
In this paper, novel nanoscale MOSFET with Source/Drain-to-Gate Non-overlapped and high-k spacer structure has been demonstrated to reduce the gate leakage current for the rst time. The gate leakage behaviour of novel MOSFET structure has been investiga
D: Collector Supply Polarity to +Leakage (N-channel) or -Leakage (P-channel) E: Vertical Current/Div to display ID between the 5th and 10th vertical divisions F: Step Generator to Voltage G: Number of steps to minimum (zero) H: Step Generator Polarity to apply reverse bias (- for N-...
The reverse leakage current increased from0.4 μ A/mmμ A/mm at room temperature to 11 μ A/mmμ A/mm at 150 ∘ C ∘ C. In Figure 1(e), both devices exhibited a similar forward BV ( BVF BVF) of 772 V at 1 μ A/mmμ A/mm. C-HEMT had no reverse blocking capability...
each opposing thyristor-diode pair 36 includes a current leakage resistor 40 in a parallel branch and a snubber branch resistor 42 and a snubber branch capacitor 44 in another parallel branch. The voltage balance resistors 40 compensate for the variation in semiconductor leakage currents so that eac...