Dry etchLow gate leakage currentField emissionA volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrodedeposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of wellcontrolledsputtering ...
Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those ...
Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those ...
Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those ...
Electron emission characteristics of field emitter arrays (FEAs) as etched shape of gate-insulating opening were investigated by the measurement of anode and/or gate leakage current and voltage. In this study, we introduced a hybrid etching process, which etches the gate insulator wet and dry ...
Therefore, we could improve process stability and emission performance, and also reduce gate leakage current. The optimum process conditions were determined by process simulations using SUPREM-4. The turn-on voltage of the fabricated field emitters was approximately 38 V. An anode current of 0.1 /...
(53) through which the gate field penetrates into the emitter barrier region (52) whereby a current between emitter and collector regions can be controlled by means of a voltage applied to the gate, and such that there is no substantial gate leakage due to tunneling through the gate barrier ...
Dielectric layers having openings of different sizes between the emission tips and the gate electrode can decrease leakage current between emitter tips and the gate layer. The emitter tips may comprise a carbon-based material. The device can be formed using processing operations similar to those ...
PURPOSE: A field emission display and a method are provided to minimize current leakage between a focus gate electrode and a gate electrode, by forming a focus gate insulation film between the focus gate electrode and the gate electrode. CONSTITUTION: A field emission display comprises a glass ...
The short thermal cycle associated with this emitter contact technology allows the formation of an abrupt, heavily doped base nearly immune to carrier freezeout, while maintaining superior emitter-base leakage characteristics at LNT. Transistors have a current gain ( beta ) as high as 500 at 84 ...