Gate-emitterthreshold voltage VGE(th) 3.0 4.0 5.0 V VCE=VGE , ID=0.5 mA Diode forwardvoltage VF 1.6 1.8 V VGE=0 V, IF=75 ATvj =25°C 1.5 VGE=0 V, IF=75 A,Tvj =125°C 1.4 VGE=0 V, IF=75 A,Tvj =175°C Gate-...
Low gate leakage currentField emissionA volcano shaped gated Si-FEA (silicon field emitter array) was simply fabricated using sputtering as a gate electrodedeposition and lift-off for the removal of the oxide mask, respectively. Due to the limited step coverage of wellcontrolledsputtering and the ...
Static characteristics Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage Gate threshold voltage Collector cut-off current Gate-emitter leakage current Test conditions VGE = 0 V, IC = 250 μA VGE = 15 V, IC = 20 A VGE = 15 V, IC = 20 A...
Static characteristics (tested on wafer unless otherwise specified) Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate threshold voltage Collector cut-off current Gate-emitter leakage current Test conditions IC = 250 μA, VGE = 0 V VGE = 15 V, IC = 15 A VCE...
Gate Leakage Current I GES V GE = V GES , V CE = 0V – – 20 μA Gate-Emitter Threshold Voltage V GE(th) I C = 7.5mA, V CE = 10V 5 6 7 Volts Collector-Emitter Saturation Voltage V CE(sat) I C = 75A, V GE = 15V, T ...
collector-emitter voltageVCEor gate-emitter voltageVGEis compared with the corresponding reference voltage trajectory. Often the difference, as a means offeedback control, is amplified to continuously modulate the GD output (e.g., amplitude, slope, and duration) through the entire switching ...
VCE = 600V —775 — VGE = 0V, VCE = 600V, TJ = 175°C VFM Diode Forward Voltage Drop — 1.80 2.6 V IF = 24A 8 —1.28— IF = 24A, TJ = 175°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE =±20V Switching Characteristics @ TJ = 25°C (unless otherwise speci...
2. Advanced active clamp techniques used by the GD3160 turn the gate Off at a reduced, controlled current when excessive VCE is present. Reducing the gate discharge current reduces the collector-emitter overshoot, improves clamping tolerance, and reduces the size of the Zeners. 3. The VCE ...
tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n-p-n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off...
D: Vertical Current/Div to display IG between the 5th and 10th vertical divisions E: Configuration to (Base/Common, Emitter/Open F: Collector Supply Polarity to (-DC) for N-channel or (+DC) for P-channel G: Variable Collector Supply to minimum % (full ccw) ...