翻译： 漏-源短路的栅极电流。可参考http://www.faststar.com.cn/dianzifuhao
1 The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim ( FN) tunneling current.对软击穿后的栅漏电流增量的分析表明，软击穿后的电流机制是FN隧穿，这是软击穿引起的氧化物的势垒高度降低造成的.
(IS= -1A,VGS=0V) Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= -24V) (VGS=0V, VDS= -24V, TA=55℃) Gate Body Leakage 栅極漏電流(VGS=+12V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= -2.6A,VGS= -10V) Static Drain-Source On-State ...
(IS= 1.25A,VGS=0V) VSD —— 1.2 Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) IDSS —— 1 Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 2.5A,VGS= 10V) Static Drain-Source On-State Resistance ...
The gate tunneling current for gate oxide thickness around 2.0 nm or below has been known to increase device leakage and power dissipation, and deteriorate device performance and circuit stability in bulk CMOS. Recently, direct tunneling current models for bulk CMOS circuit simulations have been ...
摘要: become smaller-the floating-body induced gate tunneling leakage current effect. Using the SPICE bipolar/MOS equivalent circuit approach, this effect could be analyzed in a straightforward way.关键词: MOS integrated circuits SPICE bipolar integrated circuits equivalent circuits leakage currents ...
This negative effect gets serious, combined with further y0 variation caused from the ion damages cause, and the leakage fluctuation that gives random shifts of the drain current. As a result, these comprehensive negative effects provoke additional hysteresis and drift in the thick body. For the ...
This thicker gate dielectric provides for reduced current leakage from drain region 140 to gate region 142 of passgate FET 110, which, if too large, could interfere with accurate operation of contacted-body FET structure 102 in the floating-body mode. In one example, mask 120 is used to ...
The parasitic bipolar effect of the thin film transistor causes a leakage current and provides undesired results. Therefore, methods are needed to improve the characteristics of the thin film transistor stacked on the semiconductor substrate. SUMMARY OF THE INVENTION The present invention is directed ...
Direct tunneling gate leakage current in double-gate and ultrathin body MOSFETs. IEEE TED 2002;49:2288-95.Direct-tunnel-ing gate leakage current in double-gate and ultrathinbody MOSFETs. Leland C,Yang K J,Yee C Yet al. IEEE Transactions on Electron Devices . 2002...