翻译： 漏-源短路的栅极电流。可参考http://www.faststar.com.cn/dianzifuhao
1 The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim ( FN) tunneling current.对软击穿后的栅漏电流增量的分析表明，软击穿后的电流机制是FN隧穿，这是软击穿引起的氧化物的势垒高度降低造成的.
(IS= 1.25A,VGS=0V) VSD —— 1.2 Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) IDSS —— 1 Gate Body Leakage 栅極漏電流(VGS=+20V, VDS=0V) Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 2.5A,VGS= 10V) Static Drain-Source On-State Resistance ...
The gate tunneling current for gate oxide thickness around 2.0 nm or below has been known to increase device leakage and power dissipation, and deteriorate device performance and circuit stability in bulk CMOS. Recently, direct tunneling current models for bulk CMOS circuit simulations have been ...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
In the case of the TSBR with a low p-body implantation condition, it exhibits MOSFET-like properties, such as a low forward voltage () drop, high reverse leakage current, and a low peak reverse recovery current owing to a majority carrier operation. However, in the case of the TSBR ...
This negative effect gets serious, combined with further y0 variation caused from the ion damages cause, and the leakage fluctuation that gives random shifts of the drain current. As a result, these comprehensive negative effects provoke additional hysteresis and drift in the thick body. For the ...
Investigations on BC pMOSFET with a floating-body configuration reveal that this new floating-body effect leads to pMOSFET drive capability increase with higher transconductance, lower subthreshold slope, no off-state leakage current degradation and no kink effect. The body potential is mainly ...
Yoshida, E., et al., “A capacitorless IT-DRAM technology using gate-induced drain-leakage (GIDL) current for low-power and high-embedded memory,”IEEE Trans. Electron Devices, Apr. 2006, pp. 692-697, vol. 53. Hamamoto, T., et al., “A floating-body cell fully compatible with 90-...
Direct tunneling gate leakage current in doublegate and ultrathin body MOSFETs - Chang - 2002 () Citation Context ...s. Process level efforts are also taken into account, where the use of high-k gate dielectrics and MIM capacitors is addressed. Moreover, researchers are implementing decaps in...