(th) 30 0.5 Diode Forward Voltage Drop 内附二極管正向壓降(IS= 1A,VGS=0V) Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) (VGS=0V, VDS= 30V, TA=55℃) Gate Body Leakage 栅極漏電流(VGS=+12V, VDS=0V) VSD IDSS IGSS ——— Static Drain-Source On-State ...
... 栅极沾污漏电 contamination 零栅电压漏电流 zero gate voltage drain current ... songzihou.blog.163.com|基于2个网页 2. 零栅电压漏极电流 联杰电子有限公司★LED... ... Zero Gate Voltage Drain Current 零栅电压漏极电流 Gate-Body Leakage Current,Forward 栅泄漏 …www.ledbs.com|基于1 个网页...
Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage IDSS IGSS VGS(th) RDS(on) Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance ID = 1 mA, VGS= 0 250 VDS = Max rating, VDS = Max rating @...
gate-body leakage current 大了有什么影响 gate leakage current 栅漏电流; 双语例句 1 The analysis to the increment of gate leaka... ( FN) tunneling current. 对软击穿后的栅漏电流增量的分析表明,软... oxygen vacancy是什么意思 氧的空位; 氧缺陷 However, when oxide thickness increased to a fixe...
Reliability of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) under forward gate bias was studied. During stressing, devices were observed to degrade through an increase in the gate leakage current. The degradation was correlated with a decrease in the Schottky barrier height. Using ...
On/off states Symbol Parameter Drain-source V(BR)DSS breakdown voltage IDSS Zero gate voltage drain current (VGS = 0) IGSS VGS(th) RDS(on) Gate-body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions Min. Typ. Max. Unit ID = 250µA, ...
Typ. Max. Unit Static Characteristics Drain-Source Breakdown Voltage Gate-body Leakage current Zero Gate Voltage Drain Current TJ= 25°C TJ= 100°C Gate-Threshold Voltage V(BR)DSS lGSS IDSS VGS(th) Drain-Source On-Resistance4 RDS(on) Forward Transconductance4 Dynamic Characteristics5 Input ...
1 2N7002K ELECTRICALCHARACTERISTICS Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Drain-Source On-State Re s i s ta nc e Drain-Source On-State Re s i s ta nc e Zero Gate Voltage Drain C urre nt Gate Body Leakage Forward Transconductance Dynamic S ym b o l B V ...
(57)< Abstract > The MOS transistor which was formed inside silicon on insulator structure, includes the rectification terminal area with the body part and the gate. This terminal area reduces the threshold level voltage of the transistor in converse bias state, restricts the voltage difference wit...
On/off states Test conditions V(BR)DSS Drain-source breakdown voltage (VGS= 0) ID = 250 µA IDSS Zero gate voltage drain current (VGS = 0) VDS= 100 V VDS= 100 V, TC= 125°C IGSS Gate body leakage current (VDS = 0) VGS = 20 V VGS(th) Gate threshold voltage VDS= VGS, ...