This article proposed an analytical model for GIDL current in negative capacitance junctionless FinFET (NC-JL FinFET). This model is based on tunneling mechanism and the impact of the negative capacitance is taken into consideration through LK equation. Further, the influence of various physical ...
The gate leakage current present in double-gate fully depleted fin-shaped MOSFETs with metal gate/single oxynitride layer is modeled. It can significantly contribute to the drive current measured in different conditions, according to its dependence on applied voltages to the structure electrodes, as ...
Introduced by major foundries around the 3nm/2nm nodes when further scaling of finFET devices became untenable due to issues such as channel width variations, the approach allows for the vertical stacking of planar channels, leading to a notable increase in the effective channel width. By stacking...
Catastrophic increase in static power consumption due to shot channel effects (SCEs) becomes the serious problem in future VLSI circuits. Especially, the leakage current in the SRAM array is the most critical issue for a low-power SoC because it occupies the considerable part of LSIs. 展开 ...
Optimization of leakage current in SRAM cell using shorted gate DG FinFET E.H.Poindexter MOS interface states: overview and physicochemical perpective Semicond. Sci. Technol. (1989) J.A.De Limaet al. A novel overlapping circular-gate transistor(O-CTG) and its application to analog design ...
Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET LEE Chul , YOSHIDA Makoto , JUNG Kyoung-Ho , KIM Chang Kyu , KIM Hui-Jung , PARK Heungsik , LEE Won-Sok , KIM Keunnam , KAHNG Jaerok , YANG Wouns , PARK Donggun Extended abstrac...
The architecture of GAA is designed to overcome the limitation of FinFET technology when the size shrinks. Its gate electrode wrapped around the channel to provide a better electrostatic gate control of current leakage that is essential in scaling down the transistor size as per Moor’s law. The...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
geometric size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. However, challenges from both fabrication and design issues have resulted in the development of three-dimensional designs, such as the fin field effect transistor (FinFET). ...
Enabling n-type polycrystalline Ge junctionless FinFET of low thermal budget by in situ doping of channel and visible pulsed laser annealing A low-thermal-budget n-type polycrystalline Ge (poly-Ge) channel that was prepared by plasma in-situ-doped nanocrystalline Ge (nc-Ge) and visible pulsed ...