此外,还有其他一些方法可以应对GIDL效应,例如采用低功耗工艺、优化栅极结构和控制栅极电压等。 GIDL(gate-induced drain leakage) 是指栅诱导漏极泄漏电流,对MOSFET的可靠性影响较大。 MOSFET 中引发静态功耗的泄漏电流主要有:源到漏的亚阈泄漏电流,栅泄漏电流,发生在栅漏交叠区的栅致漏极泄漏 GIDL 电流,如图所示。
如下图所示,我们可以直观看到能带在MOSFET中的表现,以NMOS为例,当加了Vgs电压时,Vgs将在Gate表面的能带向下拉(下面图中的第三个图例),使得电子更加容易穿过沟道,但由于此时Drain未加电压,能带位置没有发生变化,所以此时没有电流流过。当Drain加电压之后(下面图中的第四个图例),Drain处的能带被向下拉,从而从Source...
Current - Drain (Idss) @ Vds (Vgs=0) Standard Current Drain (Id) - Max Standard Voltage - Cutoff (VGS off) @ Id Standard Resistance - RDS(On) Standard Voltage Standard Voltage - Output Standard Voltage - Offset (Vt) Standard Current - Gate to Anode Leakage (Igao) ...
Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Resistance - RDS(On) - Voltage - Voltage - Output - Voltage - Offset (Vt) - Current - Gate to Anode Leakage (Igao) - Current - Valley (Iv) - Current - Peak ...
The leakage was caused by the dislocations located mainly in the N+ source area in the vicinity of the edge of the polycrystalline silicon gate. The stress induced by temperature gradients during wafer insertion into a furnace, its withdrawal from a furnace, and plasma damage were assumed to ...
A metal-oxide-semiconductor field effect transistor (MOSFET) with reduced leakage current includes drain and source regions separated by a channel, a drain terminal over a portion of the drain region, a source terminal over a portion of the source region and a gate terminal opposite the channel...
可以直接从价带遂穿到导带,也就是经典的BTBT (Band-To-Band-Tunneling) . 在芯片中,因为GIDL是Vg<0时的漏电,所以它主要贡献关态漏电流(Off-State)也就是待机漏电流或者热损耗(Heat Dissipation). 从工艺上,造成GIDL的因素有Drain和Gate的Overlap, 所以要把二者拉开但又不能脱离,如增加Poly Oxidation, 增加...
Current - Drain (Idss) @ Vds (Vgs=0) Null Current Drain (Id) - Max Null Voltage - Cutoff (VGS off) @ Id Null Resistance - RDS(On) Null Voltage Null Voltage - Output Null Voltage - Offset (Vt) Null Current - Gate to Anode Leakage (Igao) Null Current - Valley (Iv) Null Current...
Current - Drain (Idss) @ Vds (Vgs=0) - Current Drain (Id) - Max - Voltage - Cutoff (VGS off) @ Id - Resistance - RDS(On) - Voltage - Voltage - Output - Voltage - Offset (Vt) - Current - Gate to Anode Leakage (Igao) - Current - Valley (Iv) - Current - Peak - Applicati...
可以直接从价带遂穿到导带,也就是经典的BTBT (Band-To-Band-Tunneling) . 在芯片中,因为GIDL是Vg<0时的漏电,所以它主要贡献关态漏电流(Off-State)也就是待机漏电流或者热损耗(Heat Dissipation). 从工艺上,造成GIDL的因素有Drain和Gate的Overlap, 所以要把二者拉开但又不能脱离,如增加Poly Oxidation, 增加...