fully-depleted SOI pMOSFETquasi-two dimensional modelsurface channel electric field/ B2560R Insulated gate field effect transistors B2560B Semiconductor device modelling and equivalent circuitsIn this paper we present a compact drain leakage current model for fully-depleted (FD) SOI pMOSFETs. The ...
不是漏电，漏电是leakage current。drainage是消耗电的意思。这个drain是MOSFET电晶体的汲极，drain current是汲极电流。
相关知识点: 试题来源: 解析 不是漏电,漏电是leakage current.drainage是消耗电的意思. 这个drain是MOSFET电晶体的汲极,drain current是汲极电流. 分析总结。 词典解释是漏电流于是归结为我不明白场效应管的漏电流原电流门电流的作用意义反馈 收藏
It can be used to accurately calculate drain leakage current as a function of drain and gate biases. This model in conjunction with our previous published subthreshold and above threshold model forms a concrete drain current model for FD SOI pMOSFET operation in off and on states. 展开 ...
The values of c and d quantificationally show the influence of VG on the GIDL current in an ultra-thin ultra-short MOSFET. On the basis of these results, a new GIDL current model including VG is proposed.doi:10.7498/aps.61.028501Chen HaiFeng...
1888 IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993 Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalencebandtotheconductionbandofsilicon,aswellas tunneling...
答案解析 查看更多优质解析 解答一 举报 不是漏电,漏电是leakage current.drainage是消耗电的意思.这个drain是MOSFET电晶体的汲极,drain current是汲极电流. 解析看不懂?免费查看同类题视频解析查看解答 相似问题 英语翻译 Execute Battery current drain test cases 哪位大神帮忙翻译下 TI的LM324芯片手册:Low Supp...
漏-源漏电流 Drain-source Leakage Current IDSS 跨导 Forward Transconductance gFS 测试条件 TEST CONDITION VGS=0V, ID=250μA ID=250uA Referenced to 25℃ VGS=VDS, ID=250μA VDS=600V VGS=0V, Tj=25℃ VDS=480V VGS=0V, Tj=125℃ VDS=40V, ID=0.5A ③ 1N60 Series N-Channel MOSFET 最小...
currentshowthesametrendasafunctionofantennaarearatio(AAR)andcelllocation.EnhancementofismainlyattributedtotheincreaseofSi/SiOinterfacetrapsgeneratedintheplasmaprocessesandisnotrelatedtothesmallamountoftrappedchargeintheoxide.IndexTerms—CMOSFET,leakagecurrent,plasmachargingdamage.I.INTRODUCTIONGate-induceddrainleakage...
Y. Chang, "Inter- face trap effect on gate induced drain leakage current in submicron N- MOSFET's," IEEE Electron Device Lett., vol. 41, no. 12, pp. 2475-2477, Dec. 1994.T. Wang, C. Huang, T. E. Chang, J. W. Chou, and C. Y. Chang, "Interface trap effect on gate ...