radiation hardening (electronics)/ drain current decreaseMOSFETelectron irradiationsemiconductor devicesradiation environmentradiation damageradiation hardnessRecently, studies concerning the development of semiconductor devices which can operate normally in a radiation environment have been extensively taken place ...
AN2385 Application note Power dissipation and its linear derating factor, silicon Limited Drain Current and pulsed drain current in MOSFETs Introduction Datasheets of the modern power MOSFET devices, either of low voltage or of hig...
Drain current enhancement and negligible current collapse in GaN MOSFETs with atomic-layer-deposited HfO2 as a gate dielectric Accumulation-type GaN metal–oxide-semiconductor field-effect-transistors (MOSFET's) with atomic-layer-deposited HfO 2 gate dielectrics have been fabricate... YC Chang,WH Chan...
It can be used to accurately calculate drain leakage current as a function of drain and gate biases. This model in conjunction with our previous published subthreshold and above threshold model forms a concrete drain current model for FD SOI pMOSFET operation in off and on states. 展开 ...
摘要: Suppression of Anomalous Drain Current in Short Channel MOSFET : A-1: MOS DEVICE AND LIST (1) KONAKA Masami , IWAI Hiroshi , NISHI Yoshio Japanese journal of applied physics. Supplement 18(1), 27-33, 1979-03-01被引量: 8
A closed form inversion charge-based drain current model for a short channel symmetrically driven, lightly doped symmetric double-gate MOSFET (SDGFET) is presented. The model has physical origins, but has some fitting parameters included in order to yield a better match with TCAD device simulations...
A Unified Channel Charges Expression for Analytic MOSFET Modeling Based on a 1D Poissons equation resolution, we present an analytic model of inversion charges allowing calculation of the drain current and transconductance in the Metal Oxide Semiconductor Field Effect Transistor. The drain current and ...
A continuous, analytic drain-current model for DG MOSFETs characteristics for all regions of MOSFET operation: linear, saturation, and subthreshold, are covered under one continuous function, making it ideally sui... T Yuan,X Liang,W Wei,... - 《Electron Device Letters IEEE》 被引量: 383...
Tunnel Field Effect Transistor can be introduced as an emerging alternate to MOSFET which is energy efficient and can be used in low power applications. Due to the challenge involved in integration of band to band tunneling generation rate, the existing drain current models are inaccurate. A compa...
The pseudo-MOSFET drain-current transient time is used to determine the generation/recombination lifetimes of SOI wafers. We have analyzed this transient for p-films on p-substrates experimentally and through simulation and show the substrate, not the Si film, to dominate this transient. For negati...