In this paper, we compare the HC stress and oxide breakdown results with the fast and commonly used gate leakage current measurement A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate that the value ...
In this paper, we compare the hot carrier (HC) stress and oxide breakdown results with the fast and commonly used gate leakage current measurement. A clear correlation is found between low levels of gate leakage and both HC degradation and oxide breakdown. We, for the first time, demonstrate...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 2003-07 研究点推荐 gate leakage currents AlGaN/GaN heterostructure field effect transistors current collapse AlGaN/GaN heterostructure field effect transistor (HFET) Al2O3-based surfac...
Gray solid line indicates the gate leakage current during the same measurement. Solid fitting line in Fig. 5c is fitted using Eq. (1) in the main text Full size image Finally, as a proof of principle for realizing gate-tunable rectifier in the MoS2 TC-FET, we used a simple diode ...
The gate-drain current is not displayed as it is nearly identical to gate-source. The measurements were made varying the potential difference between the two measured terminals (e.g. V gb for measuring I gb ). The measurement were repeated for 0°C (blue lines) and 100°C (red lines) ...
This study examined the correlation between the off-state leakage current and dynamic on-resistance (RON) transients in AlGaN/GaN heterostructure field-effect transistors (HFETs) with and without a gate insulator under various stress conditions. The RON transients in a Schottky-gate HFET (SGHFET) ...
The fast I-V double sweep measurement with insignificant gate current indicates that electrons escape from high-k bulk traps to the metal gate in Vhigh level, leading to a decrease in Vt. On the contrary, electrons inject from the metal gate to high-k bulk traps in Vbase level, causing ...
In this paper, we transform multifrequency CP from a quasi-dc measurement into a true ac measurement. This ac detection scheme, called frequency-modulated CP, is far better equipped to deal with high levels of leakage currents and thereby extends the usefulness of CP to current and future ...
differentmeasurementfrequenciesof10and100kHz,andDitwas 4.Resultsanddiscussionsobtainedbyconductancemethods[17].Dielectricpropertiesarenoted atTable1.Onthestandpointofdielectricconstant,Dit,andleakage ForthecomparisonofroughnessesforALDRuandPVDRu,wecurrent,theALDRumetalgateshowsbetterdielectricpropertiesthan measuredAFM...
The 2T memory cell leakage current measurement has shown the value in the 1–2 fA/μm range (∼1.7 × 10−15 A/μm), which below the traditional DC measurements. Stefan Wachter et al. [51] have been presented a 1-bit microprocessor. The proposed device has executed the user-...