翻译： 漏-源短路的栅极电流。可参考http://www.faststar.com.cn/dianzifuhao
1 The analysis to the increment of gate leakage current after the soft breakdown shows mechanism of similar Fowler Nordheim ( FN) tunneling current.对软击穿后的栅漏电流增量的分析表明，软击穿后的电流机制是FN隧穿，这是软击穿引起的氧化物的势垒高度降低造成的.
翻译: 漏-源短路的栅极电流。 可参考http://www.***.cn/dianzifuhao 建设通:全国建筑施工企业中标_资质_建造师大数据查询 建设通是专业的建筑企业中标,不良,资质等级,建造师等信息数据查询平台。为大家提供全面的建筑施工企业业绩信息,致力于让建筑工程招投标市场透明化。广告 gate-body leakage current 大了有什...
(IS= 1A,VGS=0V) Zero Gate Voltage Drain Current 零栅壓漏極電流(VGS=0V, VDS= 30V) (VGS=0V, VDS= 30V, TA=55℃) Gate Body Leakage 栅極漏電流(VGS=+12V, VDS=0V) VSD IDSS IGSS ——— Static Drain-Source On-State Resistance 静态漏源導通電阻(ID= 3.8A,VGS=10V) RDS(ON) — ...
Chang L, Yang KJ, Yeo Y-C, Polishchuk I, King T-J, Hu C. Direct- tunneling gate leakage current in double-gate and ultrathin body MOSFETs. IEEE Trans Electron Dev 2002;49(12):2288-95.L. Chang et al., "Direct-tunneling gate leakage current in double-gate and ultrathin body ...
... 栅极沾污漏电 contamination 零栅电压漏电流 zero gate voltage drain current ... songzihou.blog.163.com|基于2个网页 2. 零栅电压漏极电流 联杰电子有限公司★LED... ... Zero Gate Voltage Drain Current 零栅电压漏极电流 Gate-Body Leakage Current,Forward 栅泄漏 …www.ledbs.com|基于1 个网页...
bodySOIMOSFETfordeep-sub-tenthmicronera,”inIEDMTech.Dig.,1999,pp.919–921.Gate-InducedDrainLeakageCurrentEnhancedbyPlasmaChargingDamageSiguangMa,YaohuiZhang,M.F.Li,WeidanLi,JosephXie,GeorgeT.T.Sheng,AndrewC.Yen,andJohnL.F.WangAbstract—Correlationbetweengate-induceddrainleakagecurrent(GIDL)currentand...
Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET LEE Chul , YOSHIDA Makoto , JUNG Kyoung-Ho , KIM Chang Kyu , KIM Hui-Jung , PARK Heungsik , LEE Won-Sok , KIM Keunnam , KAHNG Jaerok , YANG Wouns , PARK Donggun Extended abstrac...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
Another technique to reduce circuit leakage current uses substrate body bias to vary the threshold voltage of transistors in a circuit block for different modes. In this approach, during an active mode, a control circuit applies a voltage to the transistor bodies to zero- or reverse-bias the bo...