Gate-induced drain leakageOff-state stressCharge trappingDefect creationPolycrystalline silicon thin-film transistorThin film transistors have become crucial components of several electronic display devices. However, high leakage current is a frustrating impediment to increasing the efficiency of these ...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
1888 IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993 Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalencebandtotheconductionbandofsilicon,aswellas tunneling...
5) drain leakage 漏极泄漏[电流]6) electrode,drain 漏极电极补充资料:反向漏电流(inverseleakagecurrent) 反向漏电流(inverseleakagecurrent) 流过处于反向工作的pn结的微小电流称为反向漏电流。理想pn结反向漏电流中还包括体内扩散电流与空间电荷区产生电流两部分,硅pn结空间电荷区产生电流起支配作用。反向漏电流的...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
The present invention provides a method to fabricate an MOS transistor and to reduce the gate-induced-drain-leakage current. The method is primarily to form a mask on the top of the gate. Because of the screening of the mask, spaced regions will be formed between the gate and the lightly...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
The invention can improve gate induced drain leakage current effect of the NMOS devices without inducing leakage current of PN junction between NLDD doped region and pocket doped region.居建华煜李
by an impact ionization phenomenon or by a gate induced drain leakage current; and data erase operation of controlling voltage applied to the plate line ... S Koji,H Nozomu 被引量: 0发表: 2022年 Reducing gate induced drain leakage in DRAM wordline Memory devices and methods of forming memor...