1) gate induced drain leakage current 栅极感应漏极漏电流 2) gate leakage current 栅极漏电流 3) drain current 漏极电流 4) Drain[英][dreɪn] [美][dren] 漏电,漏极 5) drain leakage 漏极泄漏[电流] 6) electrode,drain 漏极电极
Gate-induced drain leakageOff-state stressCharge trappingDefect creationPolycrystalline silicon thin-film transistorThin film transistors have become crucial components of several electronic display devices. However, high leakage current is a frustrating impediment to increasing the efficiency of these ...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
The invention can improve gate induced drain leakage current effect of the NMOS devices without inducing leakage current of PN junction between NLDD doped region and pocket doped region.居建华煜李
Consequently, the method provided in the present invention can decrease the problem of gate-induced-drain-leakage current.doi:US20020137299 A1Hua-Chou TsengTony LinUSUS20020137299 2001年3月20日 2002年9月26日 Tony Lin Method for reducing the gate induced drain leakage current...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
Y. Chang, "Inter- face trap effect on gate induced drain leakage current in submicron N- MOSFET's," IEEE Electron Device Lett., vol. 41, no. 12, pp. 2475-2477, Dec. 1994.T. Wang, C. Huang, T. E. Chang, J. W. Chou, and C. Y. Chang, "Interface trap effect on gate ...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
A comprehensive modelling of the band-to-band tunnelling gate induced drain leakage (GIDL) current is conducted, based on exact WKB tunnel transparency calculations. The authors' GIDL model explains reasonably well the asymmetrical variations of the GIDL current with gate and drain voltages. In parti...