A method for programming a storage element and a storage element programmed using gate induced junction leakage current are provided. The element may include at least a floating gate on a substrate, an active region in the substrate, and a second gate adjacent to the floating gate. The method...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow ...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
The invention can improve gate induced drain leakage current effect of the NMOS devices without inducing leakage current of PN junction between NLDD doped region and pocket doped region.居建华煜李
However, most of the high-k dielectrics demonstrated severe crystallization-induced leakage currents and poor reliability in the thick EOT regions. Research on high-k dielectrics was phased out as nitrided SiO2 was successfully implemented. In the mid-1990s, interest in high-k dielectrics was ...
In general, the two-terminal resistance of locally gated BLG channels depends on the combination of p- and n-regions, and the size of locally induced gaps31,32. To derive the correct series resistance, we would need to subtract the nn’-junction resistance from the extracted device resistance...
14. In the log-scale transfer curves, it becomes evident that the off-state leakage floor is dominated by drain-to-gate-leakage that forms the gate-current out of the gate-terminal of the device. This current is contributed from recombination-components, surface-leakage, and gate-induced-...
With the reduction of oxide thickness, the gate-induced drain leakage (GIDL) increases exponentially by high gate-to-drain electric field due to an imperfect optimization of the gate-to-drain structure [2]. To achieve good retention time property in DRAM, low cell leakage current is essential ...
smaller carrier effect of mass than do larger band gap channels of devices such as silicon channel devices. The smaller band gaps and carrier effect of mass allow for more tunneling at the gate-drain junction causing gate induced drain leakage (GIDL). Gate induced drain leakage (GIDL) raises ...