Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
一个典型的MOS管有三个端子,即栅极(Gate)、源极(Source)和漏极(Drain)。MOSFET的操作原理并不复杂,简单来说就是一个开关。对于NMOS来说,Gate加电压,Source→Drain就导通(箭头方向是电子的流动方向)。Gate接地,Source→Drain就关断。当然Gate-to-Source/Drain-to-Source的偏压条件不同,MOSFET的状态也会随之改变,...
6.6Gate-induced Drain Leakage The tunneling-based leakage currents caused where the gate overlaps the drain is referred to as the gate-induced drain leakage (GIDL). Under the application of strong vertical and longitudinal fields, the drain region in the overlap region may go into deep depletion ...
The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the ...
Experimental/ insulated gate field effect transistors leakage currents semiconductor device testing tunnelling/ thermal generation gate-induced drain leakage MOSFET oxide scaling DRAM cryogenic temperatures thermal volume generation band-to-band tunneling submicrometer N + polysilicon gate CMOS process gate-to-...
1) gate induced drain leakage current 栅极感应漏极漏电流 2) gate leakage current 栅极漏电流 3) drain current 漏极电流 4) Drain[英][dreɪn] [美][dren] 漏电,漏极 5) drain leakage 漏极泄漏[电流] 6) electrode,drain 漏极电极
Gate-induced drain leakage (GIDL) has become a crucial factor of determining current characteristics in ultra-small devices where the junction doping concentration is abruptly graded. It should be effectively suppressed for the low standby power operation (LSTP) of highly scaled metal–oxide–semiconduc...
Figure 2b can be used very effectively to model the dv/dt induced breakdown characteristic of a MOSFET. It shows both main breakdown mechanisms, namely the dv/dt induced turn-on of the parasitic bipolar transistor present in all power MOSFETs and the dv/dt induced turn-on of the channel, ...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...