Gate-Source Leakage Current 青云英语翻译 请在下面的文本框内输入文字,然后点击开始翻译按钮进行翻译,如果您看不到结果,请重新翻译! 翻译结果1翻译结果2翻译结果3翻译结果4翻译结果5 翻译结果1复制译文编辑译文朗读译文返回顶部 栅源漏电流 翻译结果2复制译文编辑译文朗读译文返回顶部...
The method further includes comparing a ratio between the first discharging time and the second discharging time with a predefined threshold, and detecting a fault based on the comparing.Carlos Joao Marques MartinsAron TheilSteffen Thiele
The device gate can be self-aligned to within 0.5 μm to the source in order to maintain good high voltage performance (i.e. low DIBL) while reducing gate-source junction leakage under reverse bias. The device can be a wide-bandgap semiconductor device such as a SiC vertical channel ...
In this paper, a novel, nanoscale, metal–oxide–semiconductor field-effect transistor (MOSFET) with gate-to-source/drain non-overlapped and high-k spacer structure has been demonstrated to reduce gate leakage current for the first time. The gate leakage behaviour of the novel MOSFET structure ha...
It has been known that using selective epitaxial growth (SEG) silicon, to elevate source/drain regions, is beneficial to digital CMOS by reducing the junction leakage. In addition, this architecture also reduces the gate resistance by enabling a T-shape gate and allowing thicker silicides, which...
'Source Leakage Current Suppression By Source Surrounding Gate Structure' in Patent Application Approval Process (USPTO 20220359681) 来自 国家科技图书文献中心 喜欢 0 阅读量: 6 摘要: The following quote was obtained by the news editors from the background information supplied by the inventors: "...
(VGS=0V, VDS=-20V) Gate Body Leakage 栅极漏电流 (VGS=±10V, VDS=0V) BVDSS -20 -- -- VGS(th) -0.6 -- -1.4 V VSD -- -- -1.5 IDSS -- -- -1 μA IGSS -- -- ±100 nA Static Drain-Source On-State Resistance 静态漏源导通电阻 ID=-6A, VGS=-4.5V ID=-2.0A, VGS=-2.5...
(TA=25℃unless otherwise noted) Parameter Symbol Test Condition Min Static Drain-Source Breakdown VDoraltiang-Seource On-State RDerasiins-tSanocuerce On-State Resistance Gate Threshold Voltage Zero Gate Voltage drain Current Gate Body Leakage Forward Transconductance Dynamic3 BVDSS RDS(ON) RDS(ON)...
A: Max Peak Volts to smallest possible value above the specified VDS B: Max Peak Power Watts to the lowest setting that satisfies (ID x VDS) C: Horizontal Volts/Div to display VDS between the 5th and 10th horizontal divisions D: Collector Supply Polarity to +Leakage (N-channel) or -Leak...
The method regrows an oxide layer having a thickness of more than 0.05 nm between the gate dielectric layer and the channel region that reduces gate leakage current by 2-5 orders of magnitude and improves hot-electron reliability due to phonon-energy-coupling enhancement (PECE) effect....