但是这样的Overlay在性能上是无法接受的,太浪费面积而且Overlay电容太大,GIDL(Gate Induced Drain Leakage)漏电也会很大。所以后来发展到先做Gate再做Source/Drain,这样就可以自对准了,但是问题又来了,Source/Drain的掺杂必须要经过800C以上的高温激活,这Metal Gate的AlSiCu就没法承受了(熔点450C),所以不得不寻求新的...
The gate-induced drain leakage (GIDL) current under off-state bias stress conditions was investigated by changing gate-source voltage (V-gs) and drain-source voltage (V-ds). Off-state bias stress was found to dramatically increase the threshold V-gs from 1 to 11 V, thereby increasing the ...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
AHI, Anode Hole Injection SILC, Stress Induced Leakage Current SBD, Soft Breakdown HBD, Hard Breakdown TDDB, Time Dependent Dielectric Breakdown DBIE, Dielectric Breakdown Induced Epitaxy Oxide Charges and Traps 事物总是不完美的,由热氧化法生长的这层非晶SiO2里有一定的缺陷密度,而这些缺陷又可以作为电...
Process for fabricating thin-film semiconductor device without plasma induced damage The process yields the island- like silicon region and gate insulating film completely free from plasma- induced damage. This reduces the leakage current between the source and drain (which is due to plasma-induced ...
This study describes the dependence of the surface electric field to the junction depth of source/drain-extension, and the suppression of gate induced drain leakage (GIDL) in fully depleted shallow junction gate-overlapped source/drain-extension (SDE). The GIDL can be reduced by reducing shallow ...
We associate the gate leakage current induced gating to a virtual floating gate induced by the space charge injected from the gate.doi:10.1016/j.physe.2007.10.035D. SpanheimerL. WorschechC.R. MüllerA. ForchelElsevier B.V.Physica E: Low-dimensional Systems and Nanostructures...
Investigation on the Body Bias Dependency of Gate Induced Drain Leakage Current in the Body-Tied finFET LEE Chul , YOSHIDA Makoto , JUNG Kyoung-Ho , KIM Chang Kyu , KIM Hui-Jung , PARK Heungsik , LEE Won-Sok , KIM Keunnam , KAHNG Jaerok , YANG Wouns , PARK Donggun Extended abstrac...
second select transistor; and a control circuit configured to perform, before a program operation, a pre-charge operation comprising: applying a voltage to the second select line connected to the gate of the second select transistor to cause gate-induced drain leakage from the second select ...
Row decoder with low gate induce drain leakage cur 优质文献 相似文献 参考文献 引证文献Analysis of floating-body-induced leakage current in 0.15 μm SOI DRAM Summary form only given. Degradation of the dynamic retention time in SOI DRAMs is a critical issue in the application of SOI technology ...