Here massive and reversible conductance modulation is shown in a VO2 channel by applying gate bias V-G at low voltage by a solid-state proton (H+) conductor. By using porous silica to modulate H+ concentration in VO2, gate-induced reversible insulator-to-metal (I-to-M) phase transition ...
A gate-induced thermally stimulated current (TSC) on β′-(BEDT-TTF)(TCNQ) crystalline FET were conducted to elucidate the previously observed ferroelectric-like behaviors. TSC which is symmetric for the polarization of an applied VPG and has a peak at around 285 K was assigned as a ...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
0 评论次数: 0 文档热度: 文档分类: 待分类 1888 IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993 Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalenceband...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
In nanowire transistors, gate-induced drain leakage (GIDL) is a significant issue. In this paper, the GIDL phenomenon in nanowire GAAFETs and its mechanism are introduced, in nanowire GAAFET, longitudinal band-to-band tunneling (L-BTBT) is dominant in GIDL. The effects of nanowire diameter, ...
1) gate-induced noise 栅感应噪声1. A detailed principle and a rigorous analysis of a new noise,the gate-induced noise,in pixel MOSFET of CMOS imagers are provided. 提出一种CMOS图像传感器像素中MOSFET晶体管的栅感应噪声原理。2) induced gate noise 感应栅噪声 1. A systematic approach is used...
Silicon-germanium is an alternative channel material for pMOS FETs at 32-nm node and beyond because of lower threshold voltage and higher channel mobility in high- $k$ metal gate technology. However, gate-induced drain leakage (GIDL) is a major concern at low power technology nodes because of...