forming an inner dielectric spacer and outer dielectric spacer combination structure on a sacrificial gate structure that is present on a fin structure, wherein the inner dielectric spacer and outer dielectric spacer combination structure separates source and drain regions from the sacrificial gate ...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
1888 IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993 Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalencebandtotheconductionbandofsilicon,aswellas tunneling...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
In nanowire transistors, gate-induced drain leakage (GIDL) is a significant issue. In this paper, the GIDL phenomenon in nanowire GAAFETs and its mechanism are introduced, in nanowire GAAFET, longitudinal band-to-band tunneling (L-BTBT) is dominant in GIDL. The effects of nanowire diameter, ...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
Consequently, the method provided in the present invention can decrease the problem of gate-induced-drain-leakage current.doi:US20020137299 A1Hua-Chou TsengTony LinUSUS20020137299 * 2001年3月20日 2002年9月26日 Hua-Chou Tseng Method for reducing the gate induced drain leakage current...
看flow的顺序就可以看出它是先做N 和P 的Source/Drain并退火激活,再去做Metal1的Gate,所以Metal1要确保能够接触Source/Drain,就必须留够Overlay (rule规定为0.5um)。但是这样的Overlay在性能上是无法接受的,太浪费面积而且Overlay电容太大,GIDL(Gate Induced Drain Leakage)漏电也会很大。所以后来发展到先做Gate再做...
GATE INDUCED DRAIN LEAKAGE REDUCTION 专利名称：GATE INDUCED DRAIN LEAKAGE REDUCTION 发明人：ABDELFATTAH, Khaled 申请号：US2016/046872 申请日：20160812 公开号：WO2017/034834A1 公开日：20170302 专利内容由知识产权出版社提供 专利附图：摘要：Exemplary embodiments of the present disclosure are related to ...
high Drain-to-Gate voltage V_(DG), we also observed Trap-Assisted-Tunneling leakage current at lower V_(DG) .Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling....