forming an inner dielectric spacer and outer dielectric spacer combination structure on a sacrificial gate structure that is present on a fin structure, wherein the inner dielectric spacer and outer dielectric spacer combination structure separates source and drain regions from the sacrificial gate ...
1) gate induced drain leakage current 栅极感应漏极漏电流 2) gate leakage current 栅极漏电流 3) drain current 漏极电流 4) Drain[英][dreɪn] [美][dren] 漏电,漏极 5) drain leakage 漏极泄漏[电流] 6) electrode,drain 漏极电极
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
Enhanced gate induced drain leakage current in HfO 2 MOSFETs The substrate current of high-κ dielectric MOSFETs has been studied using dc sweep and transient (down to 100 μs per I– V curve) electrical measurements... M Gurfinkel,JS Suehle,Y Shapira - 《Microelectronic Engineering》 被引量...
看flow的顺序就可以看出它是先做N 和P 的Source/Drain并退火激活,再去做Metal1的Gate,所以Metal1要确保能够接触Source/Drain,就必须留够Overlay (rule规定为0.5um)。但是这样的Overlay在性能上是无法接受的,太浪费面积而且Overlay电容太大,GIDL(Gate Induced Drain Leakage)漏电也会很大。所以后来发展到先做Gate再做...
However, gate-induced drain leakage (GIDL) is a major concern at low power technology nodes because of band-to-band and trap-assisted tunneling (TAT) due to reduced bandgap. Here, we have studied the GIDL dependence on temperature as well as drain and substrate bias. Experimental results and...
Consequently, the method provided in the present invention can decrease the problem of gate-induced-drain-leakage current.doi:US20020137299 A1Hua-Chou TsengTony LinUSUS20020137299 2001年3月20日 2002年9月26日 Tony Lin Method for reducing the gate induced drain leakage current...
Gate-induced drain leakage (GIDL) has become a crucial factor of determining current characteristics in ultra-small devices where the junction doping concentration is abruptly graded. It should be effectively suppressed for the low standby power operation (LSTP) of highly scaled metal–oxide–semiconduc...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
FIG. 1A is an illustration of a cross-sectional view of a semiconductor device having a low band gap channel and source/drain regions with a wide band gap semiconductor to reduce gate induced drain leakage, in accordance with an embodiment of the present invention. ...