and forVDSmuch lower than thebreakdown voltage, a large current flows from the drain to bulk[1–3]. This drain leakage current is named gate-induced drain leakage (GIDL) since it is due to a gate-induced high electric field present in the gate-to-drain overlap region.Fig...
Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
Juge, "Characterization and modeling of low elec- tric field gate-induced-drain-leakage [MOSFET]," in Proc. ICMTS, 2004, pp. 149-154.D.Rideau,A.Dray,F. Gilibert,F.Agut,L.Giguerre,G.Gouget,M.Minondo,A.Juge.Characterization & modeling of low electric field gate-induced-drain-leakage....
The Gate-Induced-Drain-Leakage (GIDL) current with channel doping and width dependence are characterized. The GIDL currents are found to increase in MOSFETs with higher channel doping levels and the observed GIDL current is generated by the band-to-band-tunneling (BTBT) of electron through the ...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
1) gate induced drain leakage current 栅极感应漏极漏电流 2) gate leakage current 栅极漏电流 3) drain current 漏极电流 4) Drain[英][dreɪn] [美][dren] 漏电,漏极 5) drain leakage 漏极泄漏[电流] 6) electrode,drain 漏极电极
Gate-induced drain leakage (GIDL) has become a crucial factor of determining current characteristics in ultra-small devices where the junction doping concentration is abruptly graded. It should be effectively suppressed for the low standby power operation (LSTP) of highly scaled metal–oxide–semiconduc...
Spacer etch的主要要求:Spacer CD/CD uniformity • No foot, no notch • Bottom silicon/Ox recess • Shoulder pull down 刻蚀过程中可以会遇到的一些issue:CD/Profile not meeting spec • Top gate exposure from spacer loss • Excess Si recess cause doping issue • Leakage induced by ...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...