Gate-induced drain leakage current enhanced by plasma :栅极感应漏极泄漏电流的等离子体增强泄漏,漏极,电流,栅极漏电流,gate,drain,漏电流,Drain,漏极泄漏,漏极感应 文档格式: .pdf 文档大小: 90.33K 文档页数: 3页 顶/踩数: 0/0 收藏人数:
Gate-induced drain leakageOff-state stressCharge trappingDefect creationPolycrystalline silicon thin-film transistorThin film transistors have become crucial components of several electronic display devices. However, high leakage current is a frustrating impediment to increasing the efficiency of these ...
0 评论次数: 0 文档热度: 文档分类: 待分类 1888 IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993 Gate-InducedDrainLeakageCurrentin MOSDevices V.NathanandN.C.Das Abstract-Thegate-induceddrainleakagecurrent(GIDL)intypical n-channelMOSFET'siscalculatedfordirectandindirecttunneling fromthevalenceband...
Discusses the correlation between gate-induced drain leakage (GIDL) current and plasma charging damage for the p-metal-oxide semiconductor field-effect transistors (p-MOSFET). Background of GIDL; Experimental setup; Subthreshold characteristics for pMOSFETs with different antenna area ratio in the same...
Gate-induced drain leakage (GIDL) current is investigated in single-gate (SG) ultra-thin body field effect transistor (FET), symmetrical double-gate (DG) FinFET, and asymmetrical DG metal oxide semiconductor field effect transistor (MOSFET) devices. Measured reductions in GIDL current for SG and...
The gate-induced drain leakage current (GIDL) in typical n-channel MOSFETs is calculated for direct and indirect tunneling from the valence band to the conduction band of silicon, as well as tunneling from the conduction band minimum of silicon to the interface traps, and compared to experimental...
by an impact ionization phenomenon or by a gate induced drain leakage current; and data erase operation of controlling voltage applied to the plate line ... S Koji,H Nozomu 被引量: 0发表: 2022年 Reducing gate induced drain leakage in DRAM wordline Memory devices and methods of forming memor...
high Drain-to-Gate voltage V_(DG), we also observed Trap-Assisted-Tunneling leakage current at lower V_(DG) .Based on ISE TCAD simulations of the electric field, we propose analytical models for Band-to-Band and Trap-Assisted Gate-Induced-Drain-Leakage currents suitable for compact modeling....
GATE INDUCED DRAIN LEAKAGE REDUCTION 专利名称：GATE INDUCED DRAIN LEAKAGE REDUCTION 发明人：ABDELFATTAH, Khaled 申请号：US2016/046872 申请日：20160812 公开号：WO2017/034834A1 公开日：20170302 专利内容由知识产权出版社提供 专利附图：摘要：Exemplary embodiments of the present disclosure are related to ...
The impact of gate-induced drain leakage current on MOSFET scaling Significant gate-induced drain leakage current can be detected in thin gate oxide MOSFETs at drain voltages much lower than the junction breakdown voltage... Chan, T.Y.,J Chen,Ko, P.K.,... ...