GATE TO SOURCE/DRAIN LEAKAGE REDUCTION IN NANOSHEET TRANSISTORS VIA INNER SPACER OPTIMIZATIONA method for fabricating a semiconductor device includes forming a first inner spacer layer along a substrate and a nanosheet stack disposed on the substrate, performing an ultraviolet (UV) condensation process ...
In this paper, a novel, nanoscale, metal–oxide–semiconductor field-effect transistor (MOSFET) with gate-to-source/drain non-overlapped and high-k spacer structure has been demonstrated to reduce gate leakage current for the first time. The gate leakage behaviour of the novel MOSFET structure ha...
34. The gate leakage current at VD = 0 (see Section III.B) agrees well with the thermionic-field emission model (Solomon et al., 1986), when the potential drops in the gate and channel are taken into account. Furthermore, gate current for VGS > 0 is proportional to the gate area, ...
Due to the increase in the leakage current, the reverse operation ... H Umezawa,K Ikeda,R Kumaresan,... - 《Materials Science Forum》 被引量: 12发表: 2009年 Fluorine-plasma surface treatment for gate forward leakage current reduction in AlGaN/GaN HEMTs The gate forward leakage current in...
This extreme dependance makes a good correlation between the leakage and the structural parameters nearly impossible. This is illustrated using numerical examples designed to help the reader evaluate the orders of magnitude involved. The origin of the interfacial layer is traced back by means of ...
that, when a current concentration occurs within the guard ring area, the concentrated current is conducted directly to the source electrode in the cell area through the by-pass, thereby preventing the concentrated current from causing a forward biassing between the first wells and the source ...
The drain and the source terminals are kept at the same potential by the low channel resistance. 3. Experimental results 3.1. Influence of the Mg doping concentration on gate leakage Fig. 2 shows the current-voltage (I-V) curve measured (on the gate diode) under forward bias; the curves ...
Figure 3 shows (a) and (b) schematic diagrams of the triple-gate and planar-type H-diamond MOSFETs, respectively, (c) gate leakage current (IG,leak) for the triple-gate and planar-type MOSFETs, and (d) and (e) drain-source current versus voltage (IDS-VDS) characteristics for the trip...
The SFG structure compensates for the disadvantage of the slow write speed of the conventional FG memory devices, but the leakage of the PN junction inevitably affects the data retention time of the device. Ding et al.141 used the polarization of the ferroelectric gate dielectric HfZrO4 to ...
Current - Leakage (IS(off)) (Max) standard Output Type standard FET Type standard Current - Peak Output standard Power - Output standard Modulation or Protocol standard Function standard Isolated Power standard Frequency - Switching standard