The analytical model for the gate leakage current density has been proposed by considering strain dependent material and transport parameters and also band parameters. The different components of the gate leakage current densities such as the Fowler-Nordheim (F-N) and direct leakage current densities ...
Owing to the favourable crystalline structure and well-defined interfaces, the gate leakage current, interface state density and dielectric strength of c-Al2O3 meet the International Roadmap for Devices and Systems requirements3,5,7. Through a one-step transfer process consisting of the source, ...
Simulation Study of Gate-Drain Leakage Current and Density of Polarization Charge at Heterojunction Interface in GaN HEMTs In previous report, we showed that the source-drain leakage current at off state can be suppressed by thinning the undoped channel layer even if the gate l... Y Miyamoto,...
The leakage current density value reported in this paper represents the lowest value reported by anyone in the open literature. This is a major breakthrough and will have major impact on the silicon IC manufacturing. 展开 关键词: CMOS integrated circuits current density elemental semiconductors ...
An HFET with a gate length of 0.1 µm has exhibited a gate leakage current density of below 10<SUP>-4</SUP> A/mm even at a gate voltage of +3 V. It has also exhibited a low contact resistance of 0.3 Ωmm, a high maximum drain current density of 1.23 A/mm, and a high ...
A combination of density functional theory and nonequilibrium Green's function formalism has been applied to the atomic scale calculation of the leakage current through $hbox{SiO}_{2}$ and $hbox{SiO}_{x}hbox{N}_{y}$ dielectrics of MOSFETs. Samples with different dielectric thicknesses and ni...
The model is successfully used for a tri-layer gate-dielectric structure of HfON/HfO2/HfSiON with a U-shape nitrogen profile and a Si/SiO2-like interface, which is proposed to solve the problems of boron diffusion into channel region and high interface-state density between Si and high-k ...
bandtunnel- ing,butbyinterfacetrapassistedtunneling. 11.TUNNELING THEORY Thecompleteformulasforbothdirectandindirecttunnelinghave beenworkedoutbyKane[8].Directtunnelingoccursbetweentwo extremalocatedatthesamepointinkspace.Theformulaforthe resultingcurrentdensityjis j=(qm,/18h3)exp[-~(m,)~.~ Ei.5/21.5qhc...
In order to verify the proposed current and noise model, an accurate method for determining the device parameters is necessary. The oxide thickness and the interface trap density of gate oxide in the 20 thickness range are evaluated by the quasistatic C-V method, dealing especially with quantum...
Schottky-gated devices are common for RF-GaN-HEMTs since moderate gate-leakage is tolerable for power-amplification and absence of gate-oxide increases the areal-gate-capacitance (Cg) and hence increases charge density (ns) and drain current (Id) control by the gate-voltage (e.g., ...