昨天已经讲完了栅极材料的演变(Gate Electrode),当然伴随它一起的自然就是栅极介质层(Gate Dielectric),记住我讲的是栅极介质层,不是我们平常讲的栅极氧化层(Gate Oxide),早期我们讲的MOSFET的介质层就是我们狭义讲的Oxide,但是随着Moore's Law的scale down,我们需要不断的降低我们的oxide厚度来换取低的开启电压(栅...
Asdimensionsofthemetal—oxide.semiconductorfield—effecttransistorfMOSFET1arescalingdownandthethicknessof gateoxideisdecreased,thegateleakagebecomesmoreandmoreprominentandhasbeenoneofthemostimportantlimitingfactors toMOSFET andcircuitslifetime.Basedonreliabilitytheory andexperiments.thedirecttunnelingc~ entinlightly....
Frey, "Electron energy distribution for calculation of gate leakage current in MOSFET's", Solid-State Electronics, vol. 31, no. 6, 1988, pp. 1089-1092.N. Goldsmanm, J. Frey, "Electron energy distribution for calculation of gate leakage current in MOS- FET's", Solid-state Electronics, ...
As dimensions of the metal-oxide-semiconductor field-effect transistor (MOSFET) are scaling down and the thickness of gate oxide is decreased,the gate leakage becomes more and more prominent and has been one of the most important limiting factors to MOSFET and circuits lifetime.Based on reliabilit...
gate current for high-performance and low-power applications. Index Terms—CMOSFET, dielectric materials, direct tunneling, leakage current, silicon nitride. I. INTRODUCTION A GGRESSIVE scaling of CMOS technology in recent years has reduced the SiO gate dielectric thickness below 30 Å [1]. ...
Simple and accurate models for Gate leakage current (Ig) in nanoscale Metal Oxide Semiconductor Field Effect Transistor (MOSFET) are proposed in this paper. The accurate modeling for Oxide Electric field (Eox) and Oxide voltage (Vox) due to Short Channel Effect (SCE) between the gate and inver...
IEEETRANSACTIONSONELECTRONDEVICES,VOL.50,NO.12,DECEMBER20032499NoiseModelofGate-LeakageCurrentinUltrathinOxideMOSFETsJonghwanLee,GijsBosman,SeniorMember,IEEE,KeithR.Green,Member,IEEE,andD.LadwigAbstract—Aphysics-basedanalyticalmodelofthegate-leakagecurrentnoiseinultrathingateoxideMOSFETsispresented.Thenoisemodel...
专利名称：Suppression of MOSFET gate leakage current 发明人：Chenming Hu,Yee-Chia Yeo 申请号：US10958472 申请日：20041004 公开号：US06949769B2 公开日：20050927 专利内容由知识产权出版社提供 专利附图：摘要：A MOSFET has greatly reduced leakage current between the gate electrode and the channel, source...
An analytical model describing the gate leakage current noise in ultra-thin gate oxide MOSFET's is presented. We formulate an improved theory to characterize the gate leakage current for MOSFET's with ultra-thin gate oxide. This theory is based on the inelastic trap-assisted tunneling mechanism ...
1888IEEETRANSACTIONSONELECTRONDEVICES,VOL.40,NO.10,OCTOBER1993Gate-InducedDrainLeakageCurrentinMOSDevicesV.NathanandN.C.DasAbstract-Thegate-induceddrainleakagecurrent(GIDL)intypicaln-channelMOSFET'siscalculatedfordirectandindirecttunnelingfromthevalencebandtotheconductionbandofsilicon,aswellastunnelingfromtheconductio...