Deals with the research works presented at the 38th Annual International Reliability Physics Symposium in San Jose, California about the mechanisms of gate oxide breakdown. Problems with the E-field model theory describing gate breakdown; Theories on the physical mechanism causing oxide breakdown; ...
您有更好的方法 -- EBIC 在组件失效的机制上,我们常遇到gate oxide breakdown的问题,造成这问题的原因可能是ESD、可能是制程异常、也可能是组件设计或测试时造成的过压现象。过去我们要发掘出此问题,一般是经由发亮的gate contact VC确认漏电后,再利用酸处理把缺陷位置吃出一个洞,这个洞就是所谓的gate oxide pinhol...
A unified percolation model for gate oxide breakdown Based on the Percolation theory and defects creation mechanisms of both E model and 1/E model, a unified percolation model for gate oxide breakdown is brou... ZF Ma,YQ Zhuang,L Du,... - 《Journal of Xidian University》 被引量: 4发表...
以半导体的稳定度测试为例,最常见的就是闸极氧化崩溃(Gate oxide breakdown) 事件。 只要发生全崩溃事件,则套用至失败 … www.ni.com|基于 1 个网页 3. 闸极氧化层崩溃 ...7, 435, 442-444, 467-468闸极氧化层崩溃(gate oxide breakdown) 闸极氧化层电容(gate oxide capacitance) 闸极绝缘 … ...
TDDB, Time Dependent Dielectric Breakdown DBIE, Dielectric Breakdown Induced Epitaxy Oxide Charges and Traps 事物总是不完美的,由热氧化法生长的这层非晶SiO2里有一定的缺陷密度,而这些缺陷又可以作为电荷陷阱捕获电荷或空穴。正常情况下当施加于氧化层上的电场强度(EOX)接近5MV/cm时,会发生福勒-诺德海姆隧穿(...
This dissertation primarily focuses on the study of the CMOS device gate oxide breakdown effect on different kinds of circuits performance, also some HC effects on circuits performance are studied. The physical mechanisms for BD have been presented. A practical and accurate equivalent breakdown circuit...
An approach to statistical analysis of gate oxide breakdown mechanisms A credible statistical algorithm is required to determine the parameters of the bimodal Weibull mixture distribution exhibited by the gate oxide breakdown ... CM Tan,N Raghavan - 《Microelectronics Reliability》 被引量: 9发表: 2007...
It has been found that gate shot noise, which is commonly ignored in the as-processed nMOSFET, plays a dominant role in determining the high frequency noise in the post-oxide breakdown nMOSFET. The effect of FN stress and oxide breakdown is negligible. 展开 关键词: CMOS High-frequency ...
Solid-insulator breakdown always leads to a permanent conduction path that is irreversible. This is a built-in assumption in all gate-oxide breakdown reliability measurement and lifetime projection. This assumption is not valid when the gate-oxide thickness is less than 2 nm and the operation volt...
breakdown,Qbd,ofthegateoxide.ItisfoundthatNzOnitridedgateoxideismorerobustthan02gateoxideinresistingthedegradation.Also,togrowathinpolyoxideonthepolysilicon-gateinN20ratherthanin02lessensthedegradationontheunderlyinggateoxide.Itisnitrogen,whichdiffusesthroughthepolysilicongateandpilesupatbothpolysilicordoxideandox...