percolation modelsThe percolation model has been very successful to explain the gate oxide breakdown statistics and to establish a quantitative relation between the breakdown and the generation of defects. However, this simple geometric picture reaches its limit when the oxide thickness is scaled down ...
experimental results. This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγnoise amplitude dependence and 1/fγnoise exponent dependence. These results provide a theoretical basis for the high-κgate stacks bi-layer breakdown noise characterization ...
Reproduction of time-to-bimodal (soft- and hard-) breakdown statistical data from 3.3-nm-thick gate-oxide samples yields n[sub BD] of 3 and 4 for soft and hard breakdown, respectively. The extracted t[sub ox][sup ′] of 1.0 nm for soft breakdown, plus the transition layer thickness ...
time-dependent dielectric breakdown (TDDB)We modify the existing oxide breakdown (BD) percolation model in this letter to account for the presence of microstructural weakest link grain boundary (GB) defects in polycrystalline high- $kappa$ (HK) gate stacks. The different rates of the stress-...
After soft breakdown, which corresponds to an anomalous increase of the stress-induced leakage current of metal–oxide–semiconductor capacitors, the current behaves like a power law of the applied gate voltage V[sub G]. After soft breakdown, charge is further injected into the SiO[sub 2] ...