percolation modelsThe percolation model has been very successful to explain the gate oxide breakdown statistics and to establish a quantitative relation between the breakdown and the generation of defects. Howe
Reproduction of time-to-bimodal (soft- and hard-) breakdown statistical data from 3.3-nm-thick gate-oxide samples yields n[sub BD] of 3 and 4 for soft and hard breakdown, respectively. The extracted t[sub ox][sup ′] of 1.0 nm for soft breakdown, plus the transition layer thickness ...
time-dependent dielectric breakdown (TDDB)We modify the existing oxide breakdown (BD) percolation model in this letter to account for the presence of microstructural weakest link grain boundary (GB) defects in polycrystalline high- $kappa$ (HK) gate stacks. The different rates of the stress-...
experimental results.This model reasonably interprets the correlation between the bi-layer breakdown and the tunneling 1/fγ noise amplitude dependence and 1/fγ noise exponent dependence.These results provide a theoretical basis for the high-κ gate stacks bi-layer breakdown noise characterization ...
The evolution of the percolation resistance (R{sub}(perc)) in ultrathin gate dielectrics during progressive breakdown (PBD) is studied. For a given PBD hardness, R{sub}(perc) is found to be exponentially dependent on gate voltage. Our study on the voltage-dependence of R{sub}(perc) ...
After soft breakdown, which corresponds to an anomalous increase of the stress-induced leakage current of metal–oxide–semiconductor capacitors, the current behaves like a power law of the applied gate voltage V[sub G]. After soft breakdown, charge is further injected into the SiO[sub 2] ...
Exponential dependence of percolation resistance on gate voltage and its impacts on progressive breakdownnot avaliableLo, V.L.Pey, K.L.Tung, C.H.Ang, D.S.Tang, L.J.Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. 2005 IEEE International...