A final layer of gate electrode material can be formed and patterned to form the required device structure.doi:US6670248 B1Chew Hoe AngWenhe LinJia Zhen ZhengUSUS6670248 * Aug 7, 2002 Dec 30, 2003 Chartered Semiconductor Manufacturing Ltd. Triple gate oxide process with high-k gate dielectric...
Triple gate oxide process with high-k gate dielect 15人查看 热门文献 相似文献 参考文献 引证文献Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric An alternative surface passivation process for high-kGe metal-oxide-semiconductor (MOS) device...
Define Triple Entente. Triple Entente synonyms, Triple Entente pronunciation, Triple Entente translation, English dictionary definition of Triple Entente. n the understanding between Britain, France, and Russia that developed between 1894 and 1907 and co
Process development of ITO source/drain electrode for the top-gate indium-gallium-zinc oxide transparent thin-film transistor Indium-tin oxide (ITO) has been widely used as electrodes for LCDs and OLEDs. The applications are expanding to the transparent thin-film transistors (TTFT... Woo-Seok,...
mixed signal applications. This is a big step towards achieving leadership with our premium mixed signal processes, including triple gate oxide and ultra low noise processes already in production. We will continue to provide process solutions for the application specific needs ...
The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend dev
The fabrication and characterization of triple-gate p-type metal-oxide semiconductor field effect transistors (p-MOSFETs) on SOI material with multiple cha... M Lemme,T Mollenhauer,W Henschel,... - Conference on European Solid-state Device Research 被引量: 10发表: 2011年 Motivationens inverkan...
Top-gate zinc oxide thin-film transistors have been fabricated by thermal atomic layer deposition, and the effective process steps to improve the device stability have been investigated in detail. In particular, the incorporation of triple rapid thermal annealing steps in oxygen ambient has been propo...
An accurate electromagnetic modeling of the abovementioned heating process often requires a nonlinear model accounting for the temperature dependence of the metal permittivity and its impact on the stabilization of optical response14. In this work, we adopt a rather deterministic approach requiring an ...
Interestingly, CeO2 NPs also has strong fluorescence quenching ability53, which can be employed to efficiently quench the fluorescence of the loaded components and then restored during releasing, providing further fluorescence off-on evidence on the corresponding stimuli-responsive process. Taken together,...