US6030862 1998年10月13日 2000年2月29日 Advanced Micro Devices, Inc. Dual gate oxide formation with minimal channel dopant diffusionUS6030862 * Oct 13, 1998 Feb 29, 2000 Advanced Micro Devices, Inc. Forming a field oxide region to isolate an active area on the surface of a semiconductor ...
A structure and a method of manufacturing the structure in which boron diffusion into a gate oxide layer is suppressed. The structure is formed on a semiconductor substrate and includes a gate oxide layer formed on the semiconductor subs... DK Nayak - WO 被引量: 29发表: 0年 Highly reliable...
We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of...
Method to reduce boron diffusion through gate oxide using sidewall spacersA gate electrode of a MOS transistor wherein gate oxide 12 is placed over substrate 10. Boron-doped polysilicon gate electrode 14 is placed over gate oxide 12. Optionally, drain extender implants may be added to substrate ...
A simple method to determine channel widths for conventional and LDD MOSFET's A new method to determine the channel widths and in situ gate-oxide thicknesses of conventional and LDD MOSFET's is described. The method is based on the l......
growing a first oxide layer at an entire surface of the semiconductor substrate as a gate insulating layer, performing a first annealing process to form a diffusion barrier layer an interface between the first oxide layer and the device... YS Lee 被引量: 1发表: 2010年 Forming method of doub...
By adopting simple oxidation, a stable, stoichiometric and atomically thin oxide layer can be formed on the metal surface for 2D devices18,19. So far, oxides made of transition metals such as HfO2, TiO2, Fe2O3 and Ni2O3; post-transition metals such as Al2O3; and rare earth metals, ...
In this paper, we have analyzed the performance of InP/InGaAs heterostructure Double Gate MOSFET for variation of gate length (Lg) and barrier thickness (tb), using 2D sentaurus TCAD simulation. Drift-diffusion model was taken for simulating the proposed device. The gate length was varied from ...
even when a gate electrode of MOS transistor comprises mainly metallic silicids, ;SOLUTION: A laminate of polysilicon and WSix films patterned in the form of a gate electrode is surrounded by a stopper oxide film pattern 6b and a lightly-doped-drain(LDD) side wall 9 and then subjected to ...
233 Practical devices did not ensue until about 1960, when diffusion and oxide technologies for ... AG Milnes - Springer Netherlands 被引量: 3发表: 1980年 Vertical and lateral insulated-gate, field-effect transistors, systems and methods A field effect transistor (147) is formed in a region ...