Forming a field oxide region to isolate an active area on the surface of a semiconductor substrate, forming first gate dielectric film on active area, doping the substrate through first dielectric, masking and etching to expose active area
其由最初的Double diffusion break DDB工艺转化而来。 Finfet中通常采用双扩散区切断(double diffusion break,ddb)结构和单扩散区切断(single diffusion break,sdb)结构来实现有源区的隔离,器件单元如标准逻辑单元(logic standard cell)的有源区的宽度是按照多晶硅栅步进(contacted poly pitch,cpp)来计算的,其中,ddb结...
the presence of SiC/SiO2 interface defects, the channel mobility of SiC MOSFET devices is grossly limited, and the reliability of the gate-oxide layer as well as the stability of the threshold voltage are also significantly affected, contributing to the poor performance of the gate-oxide ...
Implanting argon into polysilicon, patterning, implanting boron fluoride at shallower depth to reduce fluorine diffusion to gate oxideUS5393676 * 1993年9月22日 1995年... M Anjum,IK Burki,CW Christian - US 被引量: 74发表: 1995年 The effects of radiation damage on the properties of Ni-nGaAs...
et al. Characterization of sputtered barium strontium titanate and strontium titanate-thin films. J. Appl. Phys. 82, 2558–2566 (1997). Google Scholar Grasser, T. et al. The paradigm shift in understanding the bias temperature instability: from reaction–diffusion to switching oxide traps. ...
we demonstrate that rare-earth metal fluorides with extremely low ion migration barriers can generally exhibit an excellent capacitive coupling over 20 μF cm−2 (with an equivalent oxide thickness of ~0.15 nm and a large effective dielectric constant near 30) and great compatibility with...
We have investigated the thermal degradation of gate oxides in metal-oxide-semiconductor (MOS) structures with Ti-polycide gates. We found that the Ti-diffusion into the underlying polysilicon, and consequently to the gate oxide occurs during thermal cycling processes. In the intermediate stages of...
Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface T... An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap cha...
The environmental insensitivity of the short-circuit photocurrent is attributed to the characteristic of the diffusion current that is associated with the gradient of carrier density. Conversely, the photocurrent with bias exhibits typical persistent photoconductivity and greatly depends on the gaseous ...
Also with cells directly immobilized on gate oxide, long-term drift associated with ion penetration into the active region is a serious issue which can potentially lead to current instabilities during measurement. Recent strides in CMOS technology, however allow the use of metal layers and vias to...