The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and vol...
The distribution of gate oxide breakdown is not driven by the conventionally-proposed thickness but by the gate voltage, and follows the minimum distribution of a lognormal stochastic variable. We ascribe the disparity between the previous results and ours to the narrower ranges of thickness and ...
您有更好的方法 -- EBIC 在组件失效的机制上,我们常遇到gate oxide breakdown的问题,造成这问题的原因可能是ESD、可能是制程异常、也可能是组件设计或测试时造成的过压现象。过去我们要发掘出此问题,一般是经由发亮的gate contact VC确认漏电后,再利用酸处理把缺陷位置吃出一个洞,这个洞就是所谓的gate oxide pinhol...
Ultrathin Gate-Oxide Breakdown—Reversibility at Low Voltage Solid-insulator breakdown always leads to a permanent conduction path that is irreversible. This is a built-in assumption in all gate-oxide breakdown relia... Cheung,P K. - 《IEEE Transactions on Device & Materials Reliability》 被引量...
Breakdown voltage (V) and charge to breakdown (Q) are two parameters often used to evaluate gate oxide reliability.In this paper,we investigate the effects of measurement methods on V and Q of the gate oxide of a 0.18μm dual gate CMOS process.Voltage ramps (V-ramp) and current ramps (...
Breakdown Voltage and Charge to Breakdown Investigation of Gate Oxide of 0.18μm Dual Gate CMOS Process with Different Measurement Methods Breakdown voltage (V) and charge to breakdown (Q) are two parameters often used to evaluate gate oxide reliability.In this paper,we investigate the effects......
...(missing level shifters)、闸极氧化层击穿(gate oxide breakdown) 和正向偏压二极体(forward-biased bulk diodes)等; Custom… www.digitalwall.com|基于3个网页 2. 闸极氧化崩溃 以半导体的稳定度测试为例,最常见的就是闸极氧化崩溃(Gate oxide breakdown) 事件。 只要发生全崩溃事件,则套用至失败 … ...
diffusion regulates the threshold voltage of the RF-LDMOS.Its gate oxide is too vulnerable once an ESD event takes place Œ1 .The drift region between the gate and N C drain is designed to support high breakdown voltages,low on-state resistance and good hot carrier injection reliability Œ...
Studying real voltage stress case high frequency (950 MHz) dynamic stress, and comparing with the traditional DC stress; A simple, practical, and analytical method is derived to study the gate oxide breakdown effect including breakdown location effect and soft / hard breakdown on the digital, anal...
The improved oxide quality is resulting in low defect densities (better 0.1cm~(-2)) and nearly doubled breakdown voltage for the same specific capacity per unit area in a 90A gate oxide 0.5 um gate length process. The charge to breakdown (QBD) is increased by a factor of 10.Proceedings ...